TITLE

Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications

AUTHOR(S)
Vorobiev, A.; Rundqvist, P.; Khamchane, K.; Gevorgian, S.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Parallel-plate Ba[sub 0.25]Sr[sub 0.75]TiO[sub 3] (BST) varactors with a record high Q factor are fabricated on Si substrate. At 45 GHz the Q factor is about 40, and the tuneability at 25 V is more than 40% in the measured frequency range 0.045–45 GHz. The improvement in the Q factor is achieved by using a thick bottom electrode consisting of Pt (50 nm)/Au (0.5 μm) allowing us to reduce the microwave losses associated with metal layers. The BST films exhibit relatively high permittivity (150) at zero bias and high resistivity (10[sup 10] Ω cm) at fields up to 700 kV/cm. © 2003 American Institute of Physics.
ACCESSION #
11028764

 

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