TITLE

Plasma etching and hydrogen blocking characteristics of PtO[sub x] thin films in ferroelectric capacitor fabrication

AUTHOR(S)
Chun-Kai Huang, Thomas R.; Tai-Bor Wu
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3147
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of a PtO[sub x] thin film as a transient template of Pt electrode in the fabrication of ferroelectric capacitor for memory devices was investigated. Fence-free patterning with a significantly high etch rate, selectivity, and sidewall slope was obtained from dry etching the photoresist-masked PtO[sub x] films using Ar/Cl[sub 2]/O[sub 2] helicon wave plasma. The x-ray photoelectron spectroscopy analysis indicates that the redeposition of PtCl[sub x] etch product can be repressed due to an in situ sidewall passivation with a PtO[sub 2] layer resulting from a further oxidation of the etched surface of PtO[sub x] film by the introduction of oxygen in the etching gas. Due to the chemical instability of oxygen in the PtO[sub x] film, a superior hydrogen blocking effect was also achieved in hydrogen plasma annealing of the Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] (PZT) ferroelectric capacitors with the use of PtO[sub x] as the top electrode, and the hydrogen degradation of the PZT capacitor was repressed. © 2003 American Institute of Physics.
ACCESSION #
11028763

 

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