TITLE

Field-induced electric switching in sol–gel-derived SiO[sub 2] films

AUTHOR(S)
Hu, J.; Ward, S.; Wang, O.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The switching dynamics of sol–gel-derived SiO[sub 2] films is investigated using voltage pulses over durations from 300 ns to 1 s and amplitudes from 1 to 20 V. The SiO[sub 2] film was fabricated using a spin-coating technique and annealed at 100 °C. The shortest switching transit time is found to be on the order of 10 ns. A delay time ranging from 100 ns to 500 ms is usually observed prior to switching, which changes exponentially with the electric field at switching, and also depends strongly on the area of the device. © 2003 American Institute of Physics.
ACCESSION #
11028761

 

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