TITLE

Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

AUTHOR(S)
Ishikawa, Yasuhiko; Imai, Yasuhiro; Ikeda, Hiroya; Tabe, Michiharu
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3162
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Alignment control of Si islands thermally agglomerated on a buried SiO[sub 2] layer of a silicon-on-insulator (SOI) structure is reported. As a starting structure, a line-shaped (001) SOI layer is prepared using an electron beam lithography and a selective oxidation technique. Annealing in an ultrahigh vacuum, SOI line structure having submicron width and thickness of ∼3 nm is deformed into island arrays aligned along two edges of the line pattern. This pattern-induced alignment occurs independent of in-plane crystalline directions of the line pattern, while we have previously reported for unpatterned SOI that the island alignment is commonly observed along the <310> directions. It is indicated that the linewidth and the SOI thickness play key roles in changing alignment behavior from the crystalline directions to the line pattern directions. © 2003 American Institute of Physics.
ACCESSION #
11028758

 

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