Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

Ishikawa, Yasuhiko; Imai, Yasuhiro; Ikeda, Hiroya; Tabe, Michiharu
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3162
Academic Journal
Alignment control of Si islands thermally agglomerated on a buried SiO[sub 2] layer of a silicon-on-insulator (SOI) structure is reported. As a starting structure, a line-shaped (001) SOI layer is prepared using an electron beam lithography and a selective oxidation technique. Annealing in an ultrahigh vacuum, SOI line structure having submicron width and thickness of ∼3 nm is deformed into island arrays aligned along two edges of the line pattern. This pattern-induced alignment occurs independent of in-plane crystalline directions of the line pattern, while we have previously reported for unpatterned SOI that the island alignment is commonly observed along the <310> directions. It is indicated that the linewidth and the SOI thickness play key roles in changing alignment behavior from the crystalline directions to the line pattern directions. © 2003 American Institute of Physics.


Related Articles

  • The atom pencil: serial writing in the sub-micrometre domain. Mützel, M.; Müller, M.; Haubrich, D.; Rasbach, U.; Meschede, D.; O’Dwyer, C.; Gay, G.; Lesegno, B.; Weiner, J.; Ludolph, K.; Georgiev, G.; Oesterschulze, E. // Applied Physics B: Lasers & Optics;Jun2005 Part 2, Vol. 80 Issue 8, p941 

    The atom pencil we describe here is a versatile tool that writes arbitrary structures by atomic deposition in a serial lithographic process. This device consists of a transversely laser-cooled and collimated cesium atomic beam that passes through a 4-pole atom-flux concentrator and impinges on...

  • Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si3N4 mask - PaDEOx. Zaborowski, M.; Grabiec, P.; Dobrowolski, R.; Panas, A.; Skwara, K.; Szmigiel, D.; Wzorek, M. // Acta Physica Polonica, A.;Dec2009 Supplement, Vol. 116, pS.139 

    Well-controlled method of Si nanopattern definition - pattern definition by edge oxidation have been presented. The technique is suitable for fabrication of narrow paths of width ranged from several tens of nm to several lm by means of photolithography equipment working with lm-scale design...

  • Synthesis of loaded silver 4A zeolite molecular sieve with magnetic cores of SiO2/(γ- Fe2O3- SiO2) for demercuration. Yue qin QIU 1a; Lei JIA // Advanced Materials Research;2014, Issue 881-883, p1144 

    It is an effective solution to the problem of agglomeration using the magnetic composite SiO2/(γ- Fe2O3- SiO2) instead of traditional magnetic particles Fe3O4 as the core of molecular sieve. The traditional hydrothermal method was utilized by means of adding the magnetic composite particles...

  • Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination. Law, M.E.; Haddara, Y.M. // Journal of Applied Physics;10/1/1998, Vol. 84 Issue 7, p3555 

    Presents a study which analyzed the effect of silicon/oxide interface on interstitials. Methodology used to conduct the study; Analytic solutions along an interface; Details on the oxidation enhanced diffusion data; Description of transient enhanced diffusion (TED) data; Findings of the study.

  • Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations. Dalla Torre, J.; Bocquet, J.-L.; Limoge, Y.; Crocombette, J.-P.; Adam, E.; Martin, G.; Baron, T.; Rivallin, P.; Mur, P. // Journal of Applied Physics;7/15/2002, Vol. 92 Issue 2, p1084 

    We present molecular dynamics simulations directed at understanding self-limiting oxidation of nanoclusters. Atomic oxygen is inserted in an atom-by-atom way in the silicon bonds to form silicon oxide. First, we focus on planar oxidation to calibrate our model and test its capabilities. Then, we...

  • Agglomeration dynamics of germanium islands on a silicon oxide substrate: A grazing incidence small-angle x-ray scattering study. Cheynis, F.; Leroy, F.; Passanante, T.; Müller, P. // Applied Physics Letters;4/22/2013, Vol. 102 Issue 16, p161603 

    Grazing-incidence small-angle X-ray scattering (GISAXS) and grazing-incidence X-ray diffraction techniques are used to characterise the thermally induced solid-state dewetting of Ge(001) thin films leading to the formation of 3D Ge islands. A quantitative analysis based on the...

  • Exposure assessment of nano-sized and respirable particles at different workplaces. Tsai, Chuen-Jinn; Huang, Cheng-Yu; Chen, Sheng-Chieh; Ho, Chi-En; Huang, Cheng-Hsiung; Chen, Chun-Wan; Chang, Cheng-Ping; Tsai, Su-Jung; Ellenbecker, Michael // Journal of Nanoparticle Research;Sep2011, Vol. 13 Issue 9, p4161 

    In this study, nanoparticle (NP, diameter < 100 nm) and respirable particles measurements were conducted at three different nanopowder workplaces, including the mixing area of a nano-SiO-epoxy molding compound plant (primary diameter: 15 nm), bagging areas of a nano-carbon black (nano-CB)...

  • Thermodynamic and kinetic stability with respect to hole trapping. of silanic bonds at the Si�SiO[sub 2] interface. Cerofolini, G.F. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 1, p49 

    The thermodynamic and kinetic stabilities of the Si�H bonds at the Si�SiO[sub 2] interface are studied on the basis of high-level quantum-mechanical calculations in the framework of density-functional theory. In the absence of an applied electric field, the silanic bond is shown to be...

  • Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon. Horiguchi, Seiji; Yoshino, Hideo // Journal of Applied Physics;8/15/1985, Vol. 58 Issue 4, p1597 

    Evaluates the interface potential barrier heights for ultrathin silicon oxides on silicon and effective electron masses in some of the oxides. Sample preparation; Derivation of charging characteristics.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics