TITLE

Thermal oxidation of gallium nitride nanowires

AUTHOR(S)
Tang, Chengchun; Bando, Yoshio; Liu, Zongwen
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3177
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal oxidation of gallium nitride (GaN) nanowires in dry air was investigated by using thermogravimetric and transmission electron microscopy. The oxidation strongly depends on the oxidation temperature and the nanowire diameters. At temperatures lower than 700 °C, the oxidation is dominantly controlled by an oxygen absorption reaction. A chemical oxidation reaction occurs upon further increasing the temperature, accompanied by the formation of monoclinic gallium oxide (Ga[sub 2]O[sub 3]). The crystalline Ga[sub 2]O[sub 3] can form a dense protective shell on the surfaces of GaN nanowires with large diameters, whereas Ga[sub 2]O[sub 3] could not crystallize into one-dimensional morphology on the initial GaN nanowires with small diameters. © 2003 American Institute of Physics.
ACCESSION #
11028753

 

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