Thermal oxidation of gallium nitride nanowires

Tang, Chengchun; Bando, Yoshio; Liu, Zongwen
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3177
Academic Journal
The thermal oxidation of gallium nitride (GaN) nanowires in dry air was investigated by using thermogravimetric and transmission electron microscopy. The oxidation strongly depends on the oxidation temperature and the nanowire diameters. At temperatures lower than 700 °C, the oxidation is dominantly controlled by an oxygen absorption reaction. A chemical oxidation reaction occurs upon further increasing the temperature, accompanied by the formation of monoclinic gallium oxide (Ga[sub 2]O[sub 3]). The crystalline Ga[sub 2]O[sub 3] can form a dense protective shell on the surfaces of GaN nanowires with large diameters, whereas Ga[sub 2]O[sub 3] could not crystallize into one-dimensional morphology on the initial GaN nanowires with small diameters. © 2003 American Institute of Physics.


Related Articles

  • Direct observation of catalytic oxidation of particulate matter using in situ TEM. Kamatani, Kohei; Higuchi, Kimitaka; Yamamoto, Yuta; Arai, Shigeo; Tanaka, Nobuo; Ogura, Masaru // Scientific Reports;7/10/2015, p10161 

    The ability to observe chemical reactions at the molecular level convincingly demonstrates the physical and chemical phenomena occurring throughout a reaction mechanism. Videos obtained through in situ transmission electron microscopy (TEM) revealed the oxidation of catalytic soot under...

  • Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy. Sukrittanon, S.; Kuang, Y. J.; Dobrovolsky, A.; Won-Mo Kang; Ja-Soon Jang; Bong-Joong Kim; Chen, W. M.; Buyanova, I. A.; Tu, C. W. // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    We have demonstrated self-catalyzed GaNxPi1-x and GaNxP1-x/GaNyP1-y core/shell nanowiregrowth by gas-source molecular beam epitaxy. The growth window for GaNxP1-x nanowires wasobserved to be comparable to that of GaP nanowires (~585 °C to ~615 °C). Transmission electronmicroscopy showed a...

  • Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques. Ponce, F. A.; Cherns, D.; Young, W. T.; Steeds, J. W. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p770 

    A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films. The Burgers vectors of dislocations is established by combining large-angle convergent beam electron diffraction and conventional...

  • Diameter control of gallium nitride nanowires. Simpkins, B. S.; Pehrsson, P. E.; Taheri, M. L.; Stroud, R. M. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p094305 

    Gallium nitride (GaN) nanowires are grown with controlled diameter and position by combining electron-beam lithography and naturally occurring surface tension forces. Lithographically defined particle diameters were held constant while only the film thickness was varied. Annealing drives...

  • Anisotropic strain state of the [formula] GaN quantum dots and quantum wires. Amstatt, B.; Landré, O.; Nicolin, V. Favre; Proietti, M. G.; Bellet-Amalric, E.; Bougerol, C.; Renevier, H.; Daudin, B. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p063521 

    The strain state of the [formula] GaN quantum dots and quantum wires has been studied by a combination of multiwavelength anomalous diffraction and diffraction anomalous fine structure under grazing incidence. The three components of the anisotropic deformation have been independently...

  • Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy. Consonni, V.; Knelangen, M.; Trampert, A.; Geelhaar, L.; Riechert, H. // Applied Physics Letters;2/14/2011, Vol. 98 Issue 7, p071913 

    The evolution of the density of self-induced GaN nanowires as a function of the growth time, gallium rate, and growth temperature has been investigated by scanning and transmission electron microscopy. Nucleation and coalescence effects have been disentangled and quantified by distinguishing...

  • Catalyst-free growth of uniform ZnO nanowire arrays on prepatterned substrate. Wang, Y. D.; Zang, K. Y.; Chua, S. J.; Fonstad, C. G. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p263116 

    Uniform and ordered ZnO nanowire arrays have been fabricated on the nanopatterned SiO2/GaN substrate without metal catalysts using hydrothermal synthesis. The nanopatterns on SiO2/GaN substrate with an average diameter of 65 nm are produced by inductively coupled plasma etching using anodic...

  • Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries. Auzelle, Thomas; Haas, Benedikt; Den Hertog, Martien; Rouvière, Jean-Luc; Daudin, Bruno; Gayral, Bruno // Applied Physics Letters;3/1/2015, Vol. 107 Issue 5, p1 

    Using correlated experiments on single nanowires (NWs) by microphotoluminescence (μ-PL) and high resolution scanning transmission electron microscopy, we attribute the 3.45 eV luminescence of GaN NWs grown by plasma assisted molecular beam epitaxy (PA-MBE) to the presence of prismatic...

  • Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects. Diercks, David R.; Gorman, Brian P.; Kirchhofer, Rita; Sanford, Norman; Bertness, Kris; Brubaker, Matt // Journal of Applied Physics;Nov2013, Vol. 114 Issue 18, p184903 

    The field evaporation behavior of c-axis GaN nanowires was explored in two different laser-pulsed atom probe tomography (APT) instruments. Transmission electron microscopy imaging before and after atom probe tomography analysis was used to assist in reconstructing the data and assess the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics