TITLE

Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP

AUTHOR(S)
Zhang, Z. H.; Cheng, K. Y.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3183
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified superlattice offers much greater advantages than the conventional InGaAs matrix layer for the growth of InAs quantum dots, where a thick InAs layer is required for the dot formation. By adjusting the number of period and the layer thickness of the superlattice structure, uniform InAs quantum dots are achieved even using an InAs deposition as thin as 2.5 monolayers. Photoluminescence measurements further verify a uniform size distribution of the achieved quantum dots. © 2003 American Institute of Physics.
ACCESSION #
11028751

 

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