TITLE

Investigation of a model molecular-electronic rectifier with an evaporated Ti–metal top contact

AUTHOR(S)
Shun-Chi Chang; Zhiyong Li; Chun Ning Lau, M.; Larade, Brian; Williams, R. Stanley
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3198
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molecular-electronic devices are usually fabricated by sandwiching organic monolayers between electrodes. Questions arise about whether the molecules react with a deposited metal. We investigated a self-assembled monolayer (SAM) of alkoxynaphthalene thiol (I) on Pt before and after Ti film deposition. The SAM on Pt was highly ordered. Ti deposition resulted in some reaction with the alkyl chains and disordering, but the napthelenes remained intact. Pinhole free films of the monolayers were characterized by current–voltage measurements, revealing that a rectification ratio as high as 5×10[sup 5] was achieved. © 2003 American Institute of Physics.
ACCESSION #
11028746

 

Related Articles

  • Electrical characterization of Al/AlOx/molecule/Ti/Al devices. Richter, C.A.; Stewart, D.R.; Ohlberg, D.A.A.; Williams, R.Stanley // Applied Physics A: Materials Science & Processing;Mar2005, Vol. 80 Issue 6, p1355 

    We report experimental electrical characterization of Al/AlOx/molecule/Ti/Al planar crossbar devices incorporating Langmuir-Blodgett organic monolayers of eicosanoic acid, ‘fast blue’, or chlorophyll-B. Current-voltage and capacitance-voltage measurements on all three molecular...

  • Reactive metal contact at indium–tin–oxide/self-assembled monolayer interfaces. Jeong Ho Cho; Yeong Don Park; Do Hwan Kim; Woong-Kwon Kim; Ho Won Jang; Jong-Lam Lee; Kilwon Cho // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p102104 

    With the aim of improving the electrical and adhesion properties of the indium–tin–oxide (ITO) electrode/organic interface, we tested Cl- and CF3-terminated self-assembled monolayers (SAMs), which react with the indium atoms of the electrode, and compared the results to those...

  • One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Wu, W.; Jung, G.-Y.; Olynick, D.L.; Straznicky, J.; Li, Z.; Li, X.; Ohlberg, D.A.A.; Chen, Y.; Wang, S.-Y.; Liddle, J.A.; Tong, W.M.; Williams, R. Stanley // Applied Physics A: Materials Science & Processing;Mar2005, Vol. 80 Issue 6, p1173 

    We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir-Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on...

  • Nanoelectronic devices from self-organized molecular switches. Mendes, P. M.; Flood, A. H.; Stoddart, J. F. // Applied Physics A: Materials Science & Processing;Mar2005, Vol. 80 Issue 6, p1197 

    The development of molecular electronic switching devices for memory and computing applications presents one of the most exciting contemporary challenges in nanoscience and nanotechnology. One basis for such a device is a two-terminal molecular-switch tunnel junction that can be electrically...

  • Exponential temperature dependence and low-bias conductance anomaly in transport through Langmuir-Blodgett monolayer devices. Stewart, D.R.; Ohlberg, D.A.A.; Beck, P.A.; Lau, C.N.; Williams, R. Stanley // Applied Physics A: Materials Science & Processing;Mar2005, Vol. 80 Issue 6, p1379 

    Current-voltage characteristics are reported as a function of temperature (2-300 K) for 2.8-nm-thick eicosanoic acid (C20) Langmuir-Blodgett organic monolayers sandwiched between planar platinum electrodes of area 5-200 µm2. An exponential temperature dependence observed between 60 and 300 K...

  • Online measurement of the optical anisotropy during the growth of crystalline organic films. Sun, L. D.; Hohage, M.; Zeppenfeld, P.; Berkebile, S.; Koller, G.; Netzer, F. P.; Ramsey, M. G. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p121913 

    We report a reflectance difference spectroscopy (RDS) investigation of the growth of para-sexiphenyl (p-6P) on a TiO2(110) single crystal substrate at 100, 300, and 400 K. The results demonstrate that RDS is a powerful technique to monitor organic thin film growth from the submonolayer regime to...

  • Pulse Withstanding Surface Mounted Film Resistors: Making the Right Choice. Morris, Tom; Warner, Chris // ECN: Electronic Component News;Jun2002, Vol. 46 Issue 7, p57 

    Focuses on the importance of pulse withstanding capabilities to the design and application of resistors. Factors contributing to the ability of resistor to withstand overload pulses; Relation between the size of the resistor and its pulse handling capability; Categories of surface mounted film...

  • Thin-Film Resistors Shrink Electronic Systems. Arcidy, Al // Power Electronics Technology;Feb2002, Vol. 28 Issue 2, p56 

    Highlights developments in thin film technology. Introduction of thin film resistor, BLU0201; Thin-film resistor chip arrays.

  • Layer structure analysis of Er delta-doped InP by x-ray crystal truncation rod scattering. Takeda, Yoshikazu; Fujita, Keiji // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p635 

    Analyzes the layer structure and crystal structure of an Er delta-doped layer in InP in a monolayer (ML) level by an x-ray crystal truncation rod (CTR) scattering measurement using synchroton radiation. Sample preparation; X-ray CTR scattering measurement.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics