Burn-in effect on GaInP heterojunction bipolar transistors

Mimila-Arroyo, J.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3204
Academic Journal
The burn-in effect in metalorganic chemical vapor deposition grown GaInP/GaAs heterojunction bipolar transistors is explained as due to the passivation of hydrogen-related recombination centers in the emitter. Results show that the diffusion base current contribution is dominated by the recombination in the emitter neutral region. The recombination centers are deactivated through the capture of electrons, available under forward bias, increasing the hole diffusion length and decreasing the diffusion contribution of the base current producing the observed current gain increase. These processes produce an independent behavior of the diffusion ideality factors for holes and electrons at each side of the emitter junction. © 2003 American Institute of Physics.


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