Comparative Structural Characterization of Thin AlGa N/GaN and InAlN/GaN Heterostructures Grown on Si(111), by MBE, with Variation of Buffer Thickness

Chowdhury, Subhra; Borisov, Boris; Chow, Peter; Biswas, Dhrubes
November 2015
Journal of Electronic Materials;Nov2015, Vol. 44 Issue 11, p4144
Academic Journal
We report growth, by plasma-assisted molecular beam epitaxy, of thin AlGaN/GaN and InAlN/GaN heterostructures on Si(111) substrate with three different buffer thickness (600, 400, and 200 nm). Successful growth by critical optimization of growth conditions was followed by comparative characterization of these heterostructures by use of high resolution x-ray diffraction (HRXRD), including reciprocal space mapping (RSM), room-temperature photoluminescence (RT-PL), and high resolution transmission electron microscopy (HRTEM). The effect of different buffer thickness on the threading dislocation (TD) density of a thin 1.5 nm AlGaN/InAlN-1.25 nm GaN-1.5 nm AlGaN/InAlN heterostructure, was also studied. Analysis revealed increasing tensile strain with decreasing buffer thickness for AlGaN-based samples; this was confirmed by the red-shift of the GaN RT-PL peak. Reduced strain in lattice-matched InAlN-based samples resulted in a blue-shift of the GaN RT-PL peak; this was indicative of better crystallographic quality than for the AlGaN/GaN samples, which was proved by XRD-FWHM and RSM results. A substantial reduction of TD density from approximately 10 to 10 cm with increasing buffer thickness resulted in a smooth thin active region for both thick buffer structures whereas the lattice-matched InAlN/GaN-based thick buffer resulted in less effect on TD and a smooth and prominent thin active region.


Related Articles

  • Misfit accommodation in a lattice-mismatched HgTe-CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy. Hanlon, T. R.; Koestner, R. J.; Liu, H.-Y. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1513 

    We report an x-ray diffraction study of a HgTe-CdTe superlattice (SL)/HgCdTe heterostructure grown by molecular beam epitaxy (MBE). The diffraction results are used to place an upper bound on the misfit accommodation at the lattice-mismatched SL/HgCdTe interface. The misfit accommodation at the...

  • High-resolution x-ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas-source molecular beam epitaxy. Vandenberg, J. M.; Chu, S. N. G.; Hamm, R. A.; Panish, M. B.; Temkin, H. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1302 

    A three-crystal geometry has been used for high-resolution x-ray diffraction (XRD) along with lattice imaging transmission electron microscopy (TEM) to study two high-quality InGaAs/InP multiquantum well structures grown on (100) InP. These superlattices were prepared by gas-source molecular...

  • Effects of ZnSe Interlayer on Properties of (CdS/ZnSe)/BeTe Type-II Super-lattices Grown by Molecular Beam Epitaxy. Li, B. S.; Akimoto, R.; Akita, K.; Hasama, H. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1137 

    An intersubband transition (ISB-T) down to 1.57 μm is realized in (CdS/ZnSe)/BeTe super-lattices for the first time. We studied the dependence of properties of super-lattices on the ZnSe interlayer by using in situ reflection of high energy electron diffraction, high-resolution X-ray...

  • CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy. Li, Jing-Jing; Liu, Xinyu; Liu, Shi; Wang, Shumin; Smith, David J.; Ding, Ding; Johnson, Shane R.; Furdyna, Jacek K.; Zhang, Yong-Hang // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p121908 

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the...

  • Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Shen, Xiao-Meng; Lin, Zhi-Yuan; Steenbergen, Elizabeth H.; Fan, Jin; He, Zhao-Yu; Lu, Jing; Johnson, Shane R.; Smith, David J.; Zhang, Yong-Hang // Applied Physics Letters;2/18/2013, Vol. 102 Issue 7, p071903 

    Molecular beam epitaxial growth of strain-balanced InAs/InAs1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples...

  • Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics. Egorov, A.; Brunkov, P.; Nikitina, E.; Pirogov, E.; Sobolev, M.; Lazarenko, A.; Baidakova, M.; Kirilenko, D.; Konnikov, S. // Semiconductors;Dec2014, Vol. 48 Issue 12, p1600 

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers...

  • Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice. Jones, K. A.; Cole, M. W.; Cooke, P.; Flemish, J. R.; Pfeffer, R. L.; Shen, H. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1609 

    Presents information on a study which determined the thickness and composition of molecular beam epitaxy grown in a superlattice structure with nominal indium concentrations by transmission electron microscopy. Background of the study; Methodology of the study; Results and discussion.

  • Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer. Ponchet, A.; Rocher, A.; Emery, J-Y.; Starck, C.; Goldstein, L. // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p1977 

    Examines the GaInAsP/InP multilayer grown by gas source molecular beam epitaxy. Assessment of interplanar spacing variations based on high resolution transmission electron microscopy images; Strain distribution in a common zero-net strained superlattices; Effect of nonplanar interfaces on...

  • Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy. Song, Jin Dong; Ok, Young-Woo; Kim, Jong Min; Lee, Yong Tak; Seong, Tae-Yeon // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5086 

    Transmission electron microscopy (TEM) is employed to investigate the structural properties of (GaP)/(InP) short-period superlattices (SPS) grown at temperatures in the range of 425–490 °C by solid source molecular beam epitaxy. TEM results show that lateral composition modulation...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics