TITLE

Atomic structure of random and c-axis oriented YMnO[sub 3] thin films deposited on Si and Y[sub 2]O[sub 3]/Si substrates

AUTHOR(S)
Yong Tae Kim; Ik Soo Kim; Seong Il Kim, W.K.; Dong Chui Yoo, W.K.; Jeong Yong Lee
PUB. DATE
October 2003
SOURCE
Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p4859
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the atomic structure of YMnO[sub 3] deposited on Si and Y[sub 2]O[sub 3] with high-resolution transmission electron microscopy and fast Fourier transforms-filtered lattice image analysis during furnace and rapid thermal annealing (RTA) processes. For the YMnO[sub 3]/Si, it is found that the YMnO[sub 3] layer is c-axis oriented with an amorphous bottom region after furnace annealing at 850 °C for 1 h. In contrast, after RTA at 850 °C for 3 min the bottom region forms YMnO[sub 3] polycrystalline layer with the {1212} plane parallel to the surface. When an Y[sub 2]O[sub 3] layer is interposed between YMnO[sub 3] and Si, a c-axis oriented YMnO[sub 3] layer grows on a [111]-oriented Y[sub 2]O[sub 3] layer. Memory window and leakage current density of the c-axis YMnO[sub 3]/[111] Y[sub 2]O[sub 3] bilayers are strongly improved due to an aligned [0001] unipolar axis. © 2003 American Institute of Physics.
ACCESSION #
10965247

 

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