Magnetoresistance in step-edge junctions based on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] films

Bosak, A.A.; Dubourdieu, C.; Chaudouët, P.; Sénateur, J.-P.; Fournier, T.
October 2003
Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p5021
Academic Journal
The magnetoresistance of step-edge junctions based on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] films was investigated using a Wheatstone bridge geometry. Two types of step-edge structures were prepared: The step was either fabricated by ion-beam etching of SrTiO[sub 3] (001) substrates or by wet-chemical etching of an insulating NdMnO[sub 3] layer deposited on SrTiO[sub 3] (001). Both the magnetoresistive and insulating layers were deposited by injection-metalorganic chemical vapor deposition. The temperature dependence of the magnetoresistance was explored for both types of junctions in different field orientations. The largest low-field magnetoresistance was obtained when the step was formed directly in the substrate; it was observed up to room temperature (∼1% for an applied field of ∼0.05 T) and at 40 K, it increased ∼12% under an applied field of ∼0.1 T. The hysteretic behavior for the two types of junctions appeared to be very different. © 2003 American Institute of Physics.


Related Articles

  • The significant and temperature-insensitive magnetoresistance observed in Co-doped (La0.7Sr0.3)MnO3 thin films. Sun, Lei; Zhang, Ji; Chen, Y. B.; Zhang, Shan-Tao; Hong, Bin; Zhao, Jiangtao; Luo, Zhenlin; Chen, Yan-Feng // AIP Advances;Jan2019, Vol. 9 Issue 1, pN.PAG 

    Magnetic compounds with significant and temperature-insensitive magnetoresistance are quite promising for device applications. Here, we intentionally doped different amounts (0.025-0.1) of Co into epitaxial (La0.7Sr0.3)MnO3 thin films. The evolution of electrical, magnetic, magneto-transport,...

  • Conduction noise in La[sub 0.67]Ca[sub 0.33]MnO[sub 3] film. Khare, Neeraj; Moharil, U. P.; Gupta, A. K. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    The temperature and frequency dependence of conduction noise in La[sub 0.67]Ca[sub 0.33]MnO[sub 3] film are reported. The film was prepared by a screen printing technique and had a metal–insulator transition temperature (T[sub p]) and ferromagnetic transition temperature (T[sub C]) at 140...

  • Influence of preparation on resistivity behavior of epitaxial.... Xiong, G.C.; Li, Q. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1689 

    Examines the magnetoresistance of thin films of doped manganese oxide deposited on (100) LaAlO[sub 3] single-crystal substrates by pulsed laser deposition. Significance of the oxygen stoichiometry and diffusion for the giant magnetoresistnce behavior in doped manganese oxide films; Epitaxial...

  • Impedance up to 6 GHz in La[sub 0.67]Sr[sub 0.33]MnO[sub 3] thin films. Reversat, L.; Crozat, P.; Lyonnet, R.; Dupas, C.; Contour, J.-P. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2596 

    The ac electrical impedance of a 400-nm-thick La[sub 0.67]Sr[sub 0.33]MnO[sub 3] thin film (on MgO) has been measured in the frequency range from 30 MHz up to 6 GHz using etched strips. The impedance is found to be nearly a constant resistance that is equal to the dc resistance. The only...

  • Growth of highly oriented Pb(Zr, Ti)O[sub 3] films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors. Basit, Nasir Abdul; Kim, Hong Koo; Blachere, Jean // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3941 

    We have grown highly oriented lead zirconate titanate [Pb(Zr, Ti)O[sub 3] or PZT] films on oxidized silicon substrates using a thin MgO buffer layer (7–70 nm thick). Ferroelectric nonvolatile memory field-effect transistors (FETs) were successfully fabricated using the...

  • Metal-insulator transition temperature dependence on lead and oxygen content in La[sub 1-x]Pb[sub x]MnO[sub 3±y] thin films. Yamada, Y.; Kusumori, T.; Muto, H. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6678 

    Preparation of the manganese oxide films with high Curie temperature (T[sub C]) above room temperature (RT) is essential for developing multilayered devices that work at RT. We have fabricated La[sub 1-x]Pb[sub x]MnO[sub 3±y] (LPMO) thin films on LaAlO[sub 3]-Sr[sub 2]AlTaO[sub 6] (001)...

  • Effect of silver doping on the surface of La5/8Ca3/8MnO3 epitaxial films. Tselev, A.; Vasudevan, R. K.; Kalinin, S. V.; Baddorf, A. P. // Applied Physics Letters;9/8/2014, Vol. 105 Issue 10, p1 

    Thin film manganese oxides (manganites) display remarkable properties, such as colossal magnetoresistance and charge ordered phases, and became a focal point of research in the past two decades owing to potential applications ranging from oxide spintronics to resistive switching-based memories....

  • Controlling phase separation in La5/8-yPryCa3/8MnO3(y = 0.45) epitaxial thin films by strain disorder. Mishra, Dileep K.; Sathe, V. G.; Rawat, R.; Ganesan, V.; Kumar, Ravi; Sharma, T. K. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    Present study reveals that the length-scale of phase separation in La5/8-yPryCa3/8MnO3 thin films can be controlled by strain disorder invoked during the growth and relaxation process of film. Strain disorder provides an additional degree of freedom to tune colossal magnetoresistance....

  • Low field colossal anisotropic magnetoresistance in spatially confined electronically phase separated La0.3Pr0.4Ca0.3MnO3 microbridges. Jeon, J.; Alagoz, H. S.; Jung, J.; Chow, K. H. // Applied Physics Letters;3/1/2015, Vol. 107 Issue 5, p1 

    Colossal in-plane anisotropic magnetoresistance (AMR) of >16 000% has been engineered in spatially confined La0.3Pr0.4Ca0.3MnO3 films. Recalling that typical AMR values in films are only a few percent, these results mark an astonishing increase that might potentially lead to fabrication of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics