TITLE

Magnetoresistance in step-edge junctions based on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] films

AUTHOR(S)
Bosak, A.A.; Dubourdieu, C.; Chaudouët, P.; Sénateur, J.-P.; Fournier, T.
PUB. DATE
October 2003
SOURCE
Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p5021
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The magnetoresistance of step-edge junctions based on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] films was investigated using a Wheatstone bridge geometry. Two types of step-edge structures were prepared: The step was either fabricated by ion-beam etching of SrTiO[sub 3] (001) substrates or by wet-chemical etching of an insulating NdMnO[sub 3] layer deposited on SrTiO[sub 3] (001). Both the magnetoresistive and insulating layers were deposited by injection-metalorganic chemical vapor deposition. The temperature dependence of the magnetoresistance was explored for both types of junctions in different field orientations. The largest low-field magnetoresistance was obtained when the step was formed directly in the substrate; it was observed up to room temperature (∼1% for an applied field of ∼0.05 T) and at 40 K, it increased ∼12% under an applied field of ∼0.1 T. The hysteretic behavior for the two types of junctions appeared to be very different. © 2003 American Institute of Physics.
ACCESSION #
10965220

 

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