Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells

Kudrawiec, R.; S&ecedil;k, G.; Misiewicz, J.; Gollub, D.; Forchel, A.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2772
Academic Journal
This letter aims to describe the effect of rapid thermal annealing on a Ga[sub 0.64]In[sub 0.36]As[sub 0.99]N[sub 0.01]/GaAs single quantum well grown by molecular-beam epitaxy. This effect was investigated using both photoluminescence and photoreflectance. A blueshift of optical transitions and a change of character of the ground-state transition were observed after annealing. We show that this behavior can be explained by a combination of two annealing-induced effects: A change in the nearest-neighbor configuration of nitrogen atoms and a simultaneous change in the quantum well profile due to atom diffusion across the quantum well interfaces. © 2003 American Institute of Physics.


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