The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd[sup 3+] luminescence in Nd-doped silicon-rich silicon oxide

Se-Young Seo; Mun-Jun Kim, B.A.; Shin, Jung H.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2778
Academic Journal
The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd[sup 3+] luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO[sub 2] matrix, were prepared by electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of SiH[sub 4] and O[sub 2] with cosputtering of Nd and subsequent anneal at 950 °C. Efficient Nd[sup 3+] luminescence with moderate temperature quenching is observed. Based on an analysis of the temperature dependence of Nd[sup 3+] luminescence lifetime, we find a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd[sup 3+] via quantum-confined excitons, while weak enough to result in a small back-transfer rate is identified as the key to Nd[sup 3+] luminescence. © 2003 American Institute of Physics.


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