TITLE

Photoluminescence studies of Si-doped AlN epilayers

AUTHOR(S)
Nam, K.B.; Nakarmi, M.L.; Li, J.; Lin, J.Y.; Jiang, H.X.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2787
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Si-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep ultraviolet picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I[sub 2]) transition was found to be the dominant recombination line in Si-doped AlN epilayers at 10 K and its emission intensity decreases with increasing Si dopant concentration. Doping-induced PL emission linewidth broadening and band-gap renormalization effects have also been observed. Time-resolved PL studies revealed a linear decrease of PL decay lifetime with increasing Si dopant concentration, which was believed to be a direct consequence of the doping-enhanced nonradiative recombination rates. © 2003 American Institute of Physics.
ACCESSION #
10964898

 

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