Temperature dependent low-field electron multiplication in In[sub 0.53]Ga[sub 0.47]As

Ng, W.K.; Tan, C.G.; David, J.P.R.; Houston, P.A.; Yee, M.; Ng, J.S.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2820
Academic Journal
Electron multiplication for a series of In[sub 0.53]Ga[sub 0.47]As p-i-n diodes and hole multiplication for a n-i-p diode were measured at electric fields of 100–260 kV/cm over a temperature range of 20–300 K. The electron multiplication characteristics consistently showed positive temperature dependence at low electric fields (below ∼200 kV/cm) but exhibited negative temperature dependence at high fields. These observations explain the apparent discrepancies of the temperature dependence of the electron ionization coefficient in In[sub 0.53]Ga[sub 0.47]As in literature. In contrast, hole multiplication showed little change with temperature. © 2003 American Institute of Physics.


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