Detection of oxygen vacancy defect states in capacitors with ultrathin Ta[sub 2]O[sub 5] films by zero-bias thermally stimulated current spectroscopy

Lau, W.S.; Leong, L.L.; Han, Taejoon; Sandler, Nathan P.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2835
Academic Journal
Defect state D (0.8 eV) was experimentally detected in Ta[sub 2]O[sub 5] capacitors with ultrathin (physical thickness <10 nm) Ta[sub 2]O[sub 5] films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more efficiently suppressed by using N[sub 2]O rapid thermal annealing (RTA) instead of using O[sub 2] RTA for postdeposition annealing and by using TiN instead of Al for top electrode. We believe that defect D is probably the first ionization level of the oxygen vacancy deep double donor. Other important defects are Si/O-vacancy complex single donors and C/O-vacancy complex single donors. © 2003 American Institute of Physics.


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