Mutual passivation of group IV donors and nitrogen in diluted GaN[sub x]As[sub 1-x] alloys

Yu, K.M.; Walukiewicz, W.; Wu, J.; Shan, W.; Beeman, J.W.; Scarpulla, M.A.; Dubon, O.D.; Ridgway, M.C.; Mars, D.E.; Chamberlin, D.R.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2844
Academic Journal
We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaN[sub x]As[sub 1-x] doped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of Ge[sub Ga] donors (Ge on Ga sites) and suppression of the N[sub As] (N on As sites) induced band gap narrowing through the formation of Ge[sub Ga]–N[sub As] nearest neighbor pairs. These results in combination with the analogous effect observed in Si-doped GaN[sub x]As[sub 1-x] provide clear evidence of the general nature of the mutual passivation phenomenon in highly mismatched semiconductor alloys. © 2003 American Institute of Physics.


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