TITLE

Mutual passivation of group IV donors and nitrogen in diluted GaN[sub x]As[sub 1-x] alloys

AUTHOR(S)
Yu, K.M.; Walukiewicz, W.; Wu, J.; Shan, W.; Beeman, J.W.; Scarpulla, M.A.; Dubon, O.D.; Ridgway, M.C.; Mars, D.E.; Chamberlin, D.R.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2844
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaN[sub x]As[sub 1-x] doped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of Ge[sub Ga] donors (Ge on Ga sites) and suppression of the N[sub As] (N on As sites) induced band gap narrowing through the formation of Ge[sub Ga]–N[sub As] nearest neighbor pairs. These results in combination with the analogous effect observed in Si-doped GaN[sub x]As[sub 1-x] provide clear evidence of the general nature of the mutual passivation phenomenon in highly mismatched semiconductor alloys. © 2003 American Institute of Physics.
ACCESSION #
10964879

 

Related Articles

  • Nitrogen in germanium. Chambouleyron, I.; Zanatta, A.R. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p1 

    Presents information pertaining to the properties of nitrogen as an impurity and as an alloy element of the germanium network. Description of the amorphous and crystalline germanium-nitrogen alloys; Important differences in the deposition methods and alloy composition; Identification of the...

  • Study of structural changes in amorphous germanium–nitrogen alloys by optical techniques. Zanatta, A. R.; Chambouleyron, I.; Santos, P. V. // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p433 

    Focuses on a study which analyzed thin films of amorphous germanium-nitrogen (Ge-N) alloys prepared by the radio-frequency sputtering deposition technique using Raman scattering spectroscopy. Variations in the nitrogen content of the samples; Investigation of the modifications of the structural...

  • On the doping efficiency of nitrogen in hydrogenated amorphous germanium. Chambouleyron, I.; Zanatta, A.R. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p58 

    Evaluates the doping efficiency of nitrogen in hydrogenated amorphous germanium. Decrease of the concentration of active nitrogen atoms; Dependence of impurity content on total nitrogen; Agreement of data with Street's model of substitutional doping.

  • Structural, optical, and electrical characterization of improved amorphous hydrogenated germanium. Turner, W. A.; Jones, S. J.; Pang, D.; Bateman, B. F.; Chen, J. H.; Li, Y.-M.; Marques, F. C.; Wetsel, A. E.; Wickboldt, P.; Paul, W.; Bodart, J.; Norberg, R. E.; El Zawawi, I.; Theye, M. L. // Journal of Applied Physics;6/15/1990, Vol. 67 Issue 12, p7430 

    Presents a study that characterized the properties of amorphous hydrogenated germanium alloy materials. Analysis of the optical properties of the material; Examination of the electrical properties of the material; Evaluation of the structural properties of the material.

  • Composition of self-assembled Ge/Si islands in single and multiple layers. Schmidt, O. G.; Denker, U.; Christiansen, S.; Ernst, F. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2614 

    The degree of Si alloying in vertically aligned self-assembled Ge islands increases with the number of stacked layers. We find that the Si-Ge interdiffusion coefficient increases by more than two orders of magnitude for stacked hut clusters. Furthermore, we determine the composition profiles...

  • Alloy that does not tarnish could revolutionise silversmith's craft.  // Product Finishing;Mar2000, Vol. 53 Issue 3, p2 

    Reports on the development a tarnish resistant germanium and sterling silver alloy. Inventor of the alloy; Process involved in the production the alloy; Applications in decorative silverworks.

  • Tin `worms' chew up, spit out germanium.  // Advanced Materials & Processes;Jun98, Vol. 153 Issue 6, p4 

    Describes an experiment in which a film of tin-germanium (GeSn) alloy several atomic layers thick had been applied to a 51 millimeter in diameter disk of germaniums (Ge). Self-assembled quantum wires formed during epitaxial growth of strained GeSn on Ge(100); Findings of Mohan Krishnamurthy and...

  • Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors. Beev, Nikolai; Kiviranta, Mikko // Review of Scientific Instruments;Jun2012, Vol. 83 Issue 6, p066107 

    Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When...

  • Implanted nitrogen in germanium. Stein, H. J. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p153 

    The first measurements of localized vibrational modes for N in crystalline Ge are reported. Nitrogen isotopes were implanted into Ge, and infrared absorption measurements were made at 80 K after laser annealing. Four isotopic mass-shifted infrared absorption bands are observed. Two of the bands...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics