TITLE

Improvement in ferroelectric properties of Pb(Zr[sub 0.35]Ti[sub 0.65])O[sub 3] thin films using a Pb[sub 2]Ru[sub 2]O[sub 7-x] conductive interfacial layer for ferroelectric random access memory application

AUTHOR(S)
Sung-Nam Ryoo, Mitsuru; Soon-Gil Yoon; Seung-Hyun Kim
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2880
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pb[sub 2]Ru[sub 2]O[sub 7-x] (PRO), having a similar lattice constant to Pb(Zr[sub 0.35]Ti[sub 0.65])O[sub 3] thin films was introduced into the Pt/PZT interface to increase the remanent polarization (P[sub r]) and retention reliability. The grain sizes of PZT thin films deposited onto PRO interlayers increase with increasing PRO film thickness and grain size (∼370 nm) of PZT films on 50 nm thick PRO layers showed a threefold increase, relative to that of PZT films (∼130 nm) without PRO layers. The Pt/PZT/Pt and Pt/PRO/PZT/PRO/Pt capacitors have a remanent polarization (2P[sub r]) of 52 and 75 μC/cm[sup 2], polarization degradation for ten years at 100 °C of 82% and 10%, respectively. The introduction of PRO into the Pt/PZT interface can greatly improve the remanent polarization and retention reliability of PZT thin films for 64 Mb FeRAM applications. © 2003 American Institute of Physics.
ACCESSION #
10964867

 

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