Preparation of parallel capacitor of epitaxial SrTiO[sub 3] film with a single-crystal-like behavior

Takashima, Hiroshi; Wang, Ruiping; Kasai, Naoko; Shoji, Akira; Itoh, Mitsuru
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2883
Academic Journal
Epitaxially grown SrTiO[sub 3] thin films with single-crystal-like dielectric behavior were obtained by the chemical mechanical planarization method. A parallel capacitor of a SrTiO[sub 3] film with excellent insulation was fabricated between YBa[sub 2]Cu[sub 3]O[sub 7-δ] electrodes by pulsed laser deposition. Dielectric constants of the parallel capacitor with a thickness of 300–600 nm are 330 and >20 000 at room temperature and 4.2 K, respectively, and obey the Curie–Weiss law above 150 K, being identical to the behavior of SrTiO[sub 3] single crystals. The microshort-free insulating film may aid in the development of oxide superconductor multilayer devices, such as superconducting quantum interference devices, three-terminal transistors, and field effect transistors. © 2003 American Institute of Physics.


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