Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

Pey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2940
Academic Journal
The physical dimension of the hillocks formed during gate-dielectric-breakdown-induced epitaxy (DBIE) is found to be dependent on transistor type. When narrow transistors of area between 3.0×10[sup -10] and 8.0×10[sup -10] cm[sup 2] with a gate oxide ranging from 16 to 33 Å electrically stressed in inversion mode under the same accelerated stress condition, the DBIEs formed in the n-metal oxide semiconductor field effect transistor (MOSFET) are found to be always about 2 times or more larger than that in the p-MOSFET. The difference in the DBIE dimensions is primarily attributed to a larger percolation leakage current in the n-MOSFET during the gate oxide breakdown transient. © 2003 American Institute of Physics.


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