TITLE

Band bending of LiF/Alq[sub 3] interface in organic light-emitting diodes

AUTHOR(S)
Kyuwook Ihm, Hideki; Tai-Hee Kang; Ki-Jeong Kim; Chan-Cuk Hwang, Hideki; Yong-Jun Park, Hideki; Ki-Bong Lee; Bongso Kim, Hideki; Cheol-Ho Jeon, Hideki; Chong-Yun Park, Hideki; Kibeom Kim, Hideki; Yoon-Heung Tak, Hideki
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2949
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The insertion of LiF for an interlayer material between the Al cathode and tris-(8-hydroxyquinoline) aluminum (Alq[sub 3]) in the organic light-emitting diodes (OLEDs) provides an improved device performance. The highly occupied molecular orbital (HOMO) level lowering in the Alq[sub 3] layer induced by a low-coverage LiF deposition results in the reduction of electron injection barrier height. We investigated the electronic structure of the interface between the ultrathin LiF and the Alq[sub 3] layer, using synchrotron x-ray photoelectron emission spectroscopy. The results revealed that the major origin of the HOMO level lowering is not the chemical bonding of dissociated fluorine in the Alq[sub 3] layer but the band bending caused by charge redistribution driven by work function difference between LiF and Alq[sub 3] layer. © 2003 American Institute of Physics.
ACCESSION #
10964844

 

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