TITLE

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

AUTHOR(S)
Chang, W.-H.; Chou, A.T.; Chen, W.Y.; Chang, H.S.; Hsu, T.M.; Pei, Z.; Chen, P.S.; Lee, S.W.; Lai, L.S.; Lu, S.C.; Tsai, M.-J.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2958
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We found that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to RT. The fabricated device shows an internal quantum efficiency of about 0.015% at RT. The improved emission property is attributed to the reduced nonradiative recombination centers due to the surface passivation and thermal treatment. © 2003 American Institute of Physics.
ACCESSION #
10964841

 

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