Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Chang, W.-H.; Chou, A.T.; Chen, W.Y.; Chang, H.S.; Hsu, T.M.; Pei, Z.; Chen, P.S.; Lee, S.W.; Lai, L.S.; Lu, S.C.; Tsai, M.-J.
October 2003
Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2958
Academic Journal
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We found that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to RT. The fabricated device shows an internal quantum efficiency of about 0.015% at RT. The improved emission property is attributed to the reduced nonradiative recombination centers due to the surface passivation and thermal treatment. © 2003 American Institute of Physics.


Related Articles

  • Stark shift in electroluminescence of individual InAs quantum dots. Itskevich, I. E.; Itskevich, I.E.; Rybchenko, S. I.; Rybchenko, S.I.; Tartakovskii, I. I.; Tartakovskii, I.I.; Stoddart, S. T.; Stoddart, S.T.; Levin, A.; Main, P. C.; Main, P.C.; Eaves, L.; Henini, M.; Parnell, S. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots....

  • Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. Wang, Q.; Wang, T.; Bai, J.; Cullis, A. G.; Parbrook, P. J.; Ranalli, F. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081915 

    Electron-luminescence (EL) and high-resolution transmission electron microscopy (TEM) measurements have been carried out on the InGaN quantum dot (QD) based light emitting diodes (LEDs) annealed at different temperatures for p-type GaN activation. The annealing temperatures are chosen based on...

  • Midinfrared electroluminescence from PbTe/CdTe quantum dot light-emitting diodes. Hochreiner, A.; Schwarzl, T.; Eibelhuber, M.; Heiss, W.; Springholz, G.; Kolkovsky, V.; Karczewski, G.; Wojtowicz, T. // Applied Physics Letters;1/10/2011, Vol. 98 Issue 2, p021106 

    Midinfrared electroluminescence of epitaxial PbTe quantum dots in CdTe with emission in the 2-3 μm wavelength range is demonstrated up to room temperature. The light-emitting diode structures were grown by molecular beam epitaxy with the active PbTe quantum dots embedded in the intrinsic zone...

  • Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Cook, N. B.; Krier, A. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021110 

    InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 μm at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as...

  • Light-emitting diodes: A bright outlook for quantum dots. Mews, Alf; Jialong Zhao // Nature Photonics;Dec2007, Vol. 1 Issue 12, p683 

    The article looks into the impact of the improved performance of light emitting diodes (LEDs) based on multilayers of quantum dots (QDs). It focuses on high-quality multicolor QD-LEDs of researchers from China and the U.S. reflecting the role of detailed nanoengineering of available materials in...

  • Bright, multicoloured light-emitting diodes based on quantum dots. Qingjiang Sun; Wang, Y. Andrew; Lin Song Li; Daoyuan Wang; Ting Zhu; Jian Xu; Chunhe Yang; Yongfang Li // Nature Photonics;Dec2007, Vol. 1 Issue 12, p717 

    Quantum-dot-based LEDs are characterized by pure and saturated emission colours with narrow bandwidth, and their emission wavelength is easily tuned by changing the size of the quantum dots. However, the brightness, efficiency and lifetime of LEDs need to be improved to meet the requirements of...

  • Electroluminescence from a single pyramidal quantum dot in a light-emitting diode. Baier, M.H.; Constantin, C.; Pelucchi, E.; Kapon, E. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1967 

    We report on the fabrication of a quantum-dot light-emitting diode (QD-LED), exhibiting electroluminescence from a single, self-formed QD obtained by epitaxial growth on pyramidal recess patterns. Moreover, selective carrier injection through a submicron metal contact and a 20-nm-wide...

  • Inkjet printing of light emitting quantum dots. Haverinen, Hanna M.; Myllylä, Risto A.; Jabbour, Ghassan E. // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    We demonstrate the fabrication of diodes having inkjet printed light emitting quantum dots layer. Close packing of printed layer is shown to be influenced by surface morphology of the underlying polymer layer and size variance of quantum dots used. We extend our approach to printing quantum dots...

  • Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes. Baek Hyun Kim; Davis, Robert F.; Chang-Hee Cho; Seong-Ju Park // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p153103 

    We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics