TITLE

Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

AUTHOR(S)
Tansu, Nelson; Jeng-Ya Yeh; Mawst, Luke J.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2512
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210–270 A/cm[sup 2] are measured for InGaAsN quantum-well lasers (L[sub cav]=1000–2000 μm) with an emission wavelength of 1317 nm. © 2003 American Institute of Physics.
ACCESSION #
10894485

 

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