TITLE

Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition

AUTHOR(S)
Noh, M.S.; Dupuis, R.D.; Bour, D.P.; Walter, G.; Holonyak, N.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2530
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report data on strain-compensated GaAsSb double-quantum-well lasers having a type-I band alignment and grown by metalorganic chemical vapor deposition on GaAs substrates. In order to compensate for strain effects and to establish a type-I band alignment, tensile-strained higher-band-gap GaAsP quantum-well barriers have been employed. A lasing wavelength of λ∼1.200 μm from a 500 μm long device at 1.15I[sub th] has been achieved at room temperature in pulsed-mode operation. The maximum output power was 20 mW for the same device. A low threshold current density of 608.0 A/cm[sup 2] was obtained for 1370 μm long and 60 μm stripe lasers. The calculated internal quantum efficiency and internal loss were 33.8% and 8.4 cm[sup -1], respectively. We also calculated an infinite cavity length threshold current density of 265 A/cm[sup 2]. From these data, a gain constant G[sub 0]∼1728 cm[sup -1] and transparency current density of 135 A/cm[sup 2] were calculated. The result showed that the strain-compensated GaAsSb quantum wells are promising active materials for 1.3 μm vertical-cavity surface-emitting lasers. © 2003 American Institute of Physics.
ACCESSION #
10894479

 

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