Contraction of aluminum oxide thin layers in optical heterostructures

Durand, O.; Wyckzisk, F.; Olivier, J.; Magis, M.; Galtier, P.; De Rossi, A.; Calligaro, M.; Ortiz, V.; Berger, V.; Leo, G.; Assanto, G.
September 2003
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2554
Academic Journal
We precisely determine the contraction of AlAs in multilayer optical waveguides, associated with selective oxidation of AlAs/GaAs epitaxial heterostructures. The average thickness of each layer was determined via x-ray reflectometry before and after oxidation, yielding an induced shrinkage of 11.4%±0.7% normal to the stack. The waveguide refractive indices were evaluated via modal-index measurements in the near-infrared. The achieved accuracy is compatible with form-birefringent phase matching in AlGaAs guided-wave frequency converters. © 2003 American Institute of Physics.


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