TITLE

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

AUTHOR(S)
Moongyu Jang; Jihun Oh; Sunglyul Maeng; Wonju Cho; Kicheon Kang; Kyoungwan Park; Seongjae Lee
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2611
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The current–voltage characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTTs) are discussed. The n-type SBTTs with 60 nm gate lengths shows typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10[sup 5] at low drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current, respectively. This phenomenon is explained by using drain induced Schottky barrier thickness thinning effect. © 2003 American Institute of Physics.
ACCESSION #
10894452

 

Related Articles

  • Dielectric-assisted liftoff technique for the formation and monolithic integration of electronic and optical devices. Metze, G. M.; Cornfeld, A. B.; Laux, P. E.; Ho, T. C.; Pande, K. P. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2576 

    A technique for the selective growth and patterning of device quality materials has been developed. This technology uses a dielectric-assisted liftoff (DAL) process to pattern molecular beam epitaxy (MBE) grown GaAs into isolated device regions. We have successfully demonstrated the...

  • InP metal-semiconductor field-effect transistors with mercury and cadmium gates. Meiners, L. G.; Clawson, A. R.; Nguyen, R. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p340 

    Depletion-type InP field-effect transistors have been constructed employing metal-semiconductor junctions between both mercury and InP and cadmium and InP as the blocking electrodes. The barrier height (0.6–0.7 eV) that can be obtained between electroplated Cd and InP is sufficiently...

  • NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR IN DELTA-DOPED AlInP STRUCTURE GROWN BY MOCVD. Yarn, K.F. // Active & Passive Electronic Components;Sep2002, Vol. 25 Issue 3, p245 

    An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of l?kA/cm 2 were achieved at room temperature. In addition, the maximum...

  • Influence of barrier inhomogeneities on noise at Schottky contacts. Güttler, Herbert H.; Werner, Jürgen H. // Applied Physics Letters;3/19/1990, Vol. 56 Issue 12, p1113 

    Electronic properties of Schottky diodes depend sensitively on spatial inhomogeneities of the metal/semiconductor interface. We find that, contrary to previous theories for low-frequency noise, the electronic properties of Schottky contacts cannot be understood if one neglects spatial...

  • Optically controlled characteristics of Schottky gated poly(3-alkylthiophene) field effect transistor. Yoshino, Katsumi; Takahashi, Hiroyuki; Muro, Keiro; Ohmori, Yutaka; Sugimoto, Ryuichi // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p5035 

    Reveals that the characteristics of Schottky gated field effect transistors fabricated utilizing poly(3-alkylthiophene) containing diphenyliodonium hexafluoroarsenate can be controlled by irradiating light on it. Results and discussion.

  • Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor.... Yang, Y.J.; Dziura, T.G.; Bardin, T.; Wang, S.C.; Fernandez, R.; Liao, Andrew S.H. // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p600 

    Examines the monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor. Effects of the conductive n-type substrate on optoelectronic integrated circuit (OEIC); Diagram of the OEIC structure; Fabrication process of the OEIC.

  • High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Biyikli, Necmi; Kimukin, Ibrahim; Kartaloglu, Tolga; Aytur, Orhan; Ozbay, Ekmel // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2344 

    We report A1GaN/GaN-based high-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed on the fabricated Schottky photodiodes. Low dark currents of < 1 pA at 20 V reverse bias...

  • High-speed InP/InGaAsP metal-semiconductor field-effect transistors grown by chloride vapor phase epitaxy. Antreasyan, A.; Garbinski, P. A.; Mattera, V. D.; Feuer, M. D.; Filipe, J.; Chu, S. N. G. // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p176 

    We report the fabrication of enhancement mode InGaAsP/InP metal-semiconductor field-effect transistors having gate lengths of 2 μm. The epitaxial layers for this structure have been grown by chloride vapor phase epitaxy. The devices show extrinsic transconductances as high as 220 mS/mm, a...

  • High-frequency noise and current-voltage characteristics of mm-wave platinum n–n+–GaAs Schottky barrier diodes. Zirath, Herbert // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1399 

    Presents information on a study that examined noise characteristics over a broad frequency range for several millimeter wave epitaxial GaAs Schottky diodes. Review of important noise generating mechanisms; Experimental results; Conclusions.

  • Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation. Knights, A.P.; Lourenco, M.A. // Journal of Applied Physics;4/15/2000, Vol. 87 Issue 8, p3973 

    Presents information on a study which described the reverse biased electrical performance of 4hydrogen-silicon carbon Schottky barrier diodes edge terminated using 30kevanadium argon+ ions. Methodology of the study; Results and discussion on the study; Conclusions.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics