TITLE

Tunnel magnetoresistance in nanojunctions based on Sr[sub 2]FeMoO[sub 6]

AUTHOR(S)
Bibes, M.; Bouzehouane, K.; Barthelemy, A.; Besse, M.; Fusil, S.; Bowen, M.; Seneor, P.; Carrey, J.; Cros, V.; Vaures, A.; Contour, J.-P.; Fert, A.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2629
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the observation of magnetoresistance in a Sr[sub 2]FeMoO[sub 6] (SFMO)-based tunnel junction. This result is obtained by combining a three-step process for the growth of the Sr[sub 2]FeMoO[sub 6] layer by pulsed laser deposition with a technology allowing the definition of nanometer-sized junctions. A clear positive magnetoresistive signal of 50% is obtained at low temperature in a Sr[sub 2]FeMoO[sub 6]/SrTiO[sub 3]/Co junction. Since the SrTiO[sub 3]/Co interface is known to have a negative spin polarization of about 20%, this result yields a negative spin polarization of SFMO, which we find to amount to more than 85% in our film. This confirms the half-metallic character of this compound, predicted by band structure calculations. © 2003 American Institute of Physics.
ACCESSION #
10894446

 

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