TITLE

Local epitaxial growth of ZrO[sub 2] on Ge (100) substrates by atomic layer epitaxy

AUTHOR(S)
Hyoungsub Kim; Chi On Chui; Saraswat, Krishna C.; McIntyre, Paul C.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2647
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ∼55-Å ZrO[sub 2] film on a Ge (100) substrate using ZrCl[sub 4] and H[sub 2]O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO[sub 2] and [100] Ge//[100] ZrO[sub 2]] without a distinct interfacial layer, unlike the situation observed when ZrO[sub 2] is deposited using the same method on Si. Relatively large lattice mismatch (∼10%) between ZrO[sub 2] and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance–voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density. © 2003 American Institute of Physics.
ACCESSION #
10894440

 

Related Articles

  • Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition. Legagneux, P.; Garry, G.; Dieumegard, D.; Schwebel, C.; Pellet, C.; Gautherin, G.; Siejka, J. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1506 

    Yttria-stabilized zirconia (YSZ) films have been grown on Si (100) substrates by ion sputter deposition using ultrahigh vacuum system with in situ diagnostic equipment. Epitaxial conditions of YSZ (100) films were achieved between 700 and 800 °C by using an oxygen partial pressure around...

  • Heteroepitaxial growth of Y2O3 films on silicon. Fukumoto, Hirofumi; Imura, Takeshi; Osaka, Yukio // Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p360 

    Yttria (Y2 O3 ) films have been grown on Si (100) and Si (111) substrates heated at 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of Y2 O3 films on Si (100) and Si (111) substrates. The (111)...

  • Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO[sub 3]).... Eom, C.B.; Van Dover, R.B. // Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2570 

    Presents result of epitaxial ferroelectric heterostructures with strontium ruthenium oxide electrodes on strontium-titanium oxygen and silicon. Growth of structure in situ by 90 degrees off-axis sputtering; Manifestation of optimum conditions for growing epitaxial layers; Examination of...

  • Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition. Fork, D. K.; Fenner, D. B.; Connell, G. A. N.; Phillips, Julia M.; Geballe, T. H. // Applied Physics Letters;9/10/1990, Vol. 57 Issue 11, p1137 

    Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native...

  • Epitaxial growth of SrTiO[sub 3] films on CeO[sub 2]/yttria-stabilized zirconia/Si(001) with TiO[sub 2] atomic layer by pulsed-laser deposition. Yamada, Tomoaki; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu // Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4815 

    Epitaxial SrTiO[sub 3] (STO) films were fabricated on CeO[sub 2]/yttria-stabilized zirconia(YSZ)/Si(001) substrates by the insertion of a TiO[sub 2] atomic layer by pulsed-laser deposition. X-ray diffraction and reflection high-energy electron diffraction showed that epitaxial STO films with...

  • Dielectric properties of strained (Ba, Sr)TiO[sub 3] thin films epitaxially grown on Si with thin yttria-stabilized zirconia buffer layer. Jun, Sungjin; Kim, Young Sung; Lee, Jaichan; Kim, Young Woon // Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2542 

    We have grown epitaxial (Ba[sub 0.5], Sr[sub 0.5])TiO[sub 3] (BST) thin films on Si with very thin yttria-stabilized zirconia (YSZ) buffer layer. The thin YSZ buffer layer affects the stress state of the epitaxial BST layer as well as the growth behavior of the BST layer, i.e., the degree of...

  • Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations. Pintilie, Lucian; Boldyreva, Ksenia; Alexe, Marin; Hesse, Dietrich // Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p024101 

    The temperature dependence of the ferroelectric hysteresis and capacitance in PbZrO3 epitaxial films with (120)O and (001)O orientations was investigated in the 4.2–400 K temperature range. It was found that the films with (120)O orientation show a mixture of ferroelectric and...

  • Epitaxial growth of YBa2Cu3O7-x thin films on Si(100) with zirconia buffers of varying crystalline quality and structure. Lubig, A.; Buchal, Ch.; Schubert, J.; Copetti, C.; Guggi, D.; Jia, C. L.; Stritzker, B. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5560 

    Presents a study which examined the epitaxial growth of yttrium barium[sub2]copper[sub3]oxygen[sub7-x] thin films on silicon(100) with zirconia buffers on varying crystalline quality and structure. Background information on barium[sub2]copper[sub3]oxygen[sub7-x]; Experimental methods; Results...

  • New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors. Sambasivan, S.; Kim, I.; Barnett, S.; Zurbuchen, M. A.; Ji, J.; Kang, B. W.; Goyal, A.; Barnes, P. N.; Oberly, C. E. // Journal of Materials Research;Apr2003, Vol. 18 Issue 4, p919 

    Proposes an approach for the production of yttria-stabilized zirconia oxide buffer layers directly on metal rolling-assisted biaxially textured substrates. Primary applications of high-temperature superconductor-coated conductors; Functions of buffer layers; Comparison between nitride and oxide...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics