Local epitaxial growth of ZrO[sub 2] on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim; Chi On Chui; Saraswat, Krishna C.; McIntyre, Paul C.
September 2003
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2647
Academic Journal
High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ∼55-Å ZrO[sub 2] film on a Ge (100) substrate using ZrCl[sub 4] and H[sub 2]O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO[sub 2] and [100] Ge//[100] ZrO[sub 2]] without a distinct interfacial layer, unlike the situation observed when ZrO[sub 2] is deposited using the same method on Si. Relatively large lattice mismatch (∼10%) between ZrO[sub 2] and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance–voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density. © 2003 American Institute of Physics.


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