Temperature-dependent photoluminescence of ZnSe/ZnS quantum dots fabricated under the Stranski–Krastanov mode

Kim, Y.G.; Joh, Y.S.; Song, J.H.; Baek, K.S.; Chang, S.K.; Sim, E.D.
September 2003
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2656
Academic Journal
Self-assembled ZnSe/ZnS quantum dots (QDs) have been grown in the Stranski–Krastanov (S–K) mode using a metalorganic chemical vapor deposition technique under the atomic-layer epitaxy mode. Atomic-force-microscopy measurements on the uncapped ZnSe/ZnS QDs reveal that lens-shaped ZnSe QDs are formed after 1–2 monolayer ZnSe is deposited. The ZnSe QDs are estimated 1–2 nm in height and 25–35 nm in radius. The temperature-dependent behavior of confined carriers in the ZnSe QDs has been investigated through photoluminescence (PL) measurements. PL spectra show a substantial PL linewidth narrowing accompanied by a large redshift of the emission peak energy with increasing temperature. This unusual temperature-dependent behavior is interpreted as the dot-to-dot carrier transfer through the wetting layer, which is common to QDs grown in the S–K mode. © 2003 American Institute of Physics.


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