TITLE

Single-electron AND/NAND logic circuits based on a self-organized dot network

AUTHOR(S)
Nakajima, F.; Miyoshi, Y.; Motohisa, J.; Fukui, T.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2680
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes. © 2003 American Institute of Physics.
ACCESSION #
10894429

 

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