Pentacene thin-film transistors with Al[sub 2]O[sub 3+x] gate dielectric films deposited on indium-tin-oxide glass

Jiyoul Lee; Kim, J.H.; Seongil Im
September 2003
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2689
Academic Journal
We report on the fabrication of pentacene thin-film transistors (TFTs) with Al[sub 2]O[sub 3+x] films as the gate dielectric that has been deposited on indium-tin-oxide glass by rf magnetron sputtering at room temperature. Although the Al[sub 2]O[sub 3+x] was expected to show lower capacitance and breakdown field than stoichiometric Al[sub 2]O[sub 3], our pentacene TFTs with optimized thin Al[sub 2]O[sub 3+x] gate dielectric exhibited a moderately high field mobility of 0.14 cm[sup 2]/V s, an outstanding subthreshold slope of 0.88 V/dec, and an on/off ratio over 10[sup 6]. Our work demonstrates that RT-deposited Al[sub 2]O[sub 3+x] is a promising gate dielectric material for organic TFTs. © 2003 American Institute of Physics.


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