TITLE

Dominance of deep over shallow donors in ZnO-based varistors

AUTHOR(S)
Fernandez-Hevia, D.; de Frutos, J.; Caballero, A.C.; Fernandez, J.F.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2692
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Broadband admittance spectroscopy measurements of ZnO-based varistors are analyzed in terms of charge transport theory through double Schottky barriers, hence obtaining empirical evidence about the nonmajority of the shallow donor in n-type ZnO. The dominant defect species is found to be a deep donor, which agrees with recent first-principles calculations. This result consistently explains the observed frequency-domain non-Debye and time-domain nonexponential electrical response, and invalidates a key assumption underlying various electrical characterization studies of this material. We find two deep levels with fine structures. These fine structures are attributable to fluctuating chemical environments around the defects. © 2003 American Institute of Physics.
ACCESSION #
10894425

 

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