TITLE

Domain structure of epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] thin films grown on (001) SrTiO[sub 3] substrates

AUTHOR(S)
Pan, X. O.; Jiang, J. C.; Theis, C. D.; Schlom, D. G.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2315
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The domain structure of epitaxial (001) Bi[sub 4]Ti[sub 3]O[sub 12] thin films grown on (001) SrTiO[sub 3] substrates by reactive molecular beam epitaxy was studied using transmission electron microscopy. It was found that the Bi[sub 4]Ti[sub 3]O[sub 12] thin films contain randomly distributed rotation domains of two different types, which are related by a 90° rotation around the c axis of Bi[sub 4]Ti[sub 3]O[sub 12]. These domains result from the difference in crystallographic symmetry between the Bi[sub 4]Ti[sub 3]O[sub 12] (001) plane and the SrTiO[sub 3] (001) surface. Moreover, out-of-phase boundaries were frequently observed in the epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] films. Detailed quantitative high-resolution transmission electron microscopy studies showed that the growth of epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] film on the SrTiO[sub 3] (001) surface begins with the energetically favorable central TiO[sub 2] layer in the middle of the triple perovskite block within Bi[sub 4]Ti[sub 3]O[sub 12]. As a result, a number of out-of-phase domain boundaries are formed at the atomic steps on the substrate surface. These studies suggest that Bi[sub 4]Ti[sub 3]O[sub 12] films grow on (001) SrTiO[sub 3] substrates through two-dimensional island growth mechanism, where individual domains nucleate with random orientations of their polar a axis along either [110] or [110] direction of SrTiO[sub 3]. © 2003 American Institute of Physics.
ACCESSION #
10848428

 

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