Domain structure of epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] thin films grown on (001) SrTiO[sub 3] substrates

Pan, X. O.; Jiang, J. C.; Theis, C. D.; Schlom, D. G.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2315
Academic Journal
The domain structure of epitaxial (001) Bi[sub 4]Ti[sub 3]O[sub 12] thin films grown on (001) SrTiO[sub 3] substrates by reactive molecular beam epitaxy was studied using transmission electron microscopy. It was found that the Bi[sub 4]Ti[sub 3]O[sub 12] thin films contain randomly distributed rotation domains of two different types, which are related by a 90° rotation around the c axis of Bi[sub 4]Ti[sub 3]O[sub 12]. These domains result from the difference in crystallographic symmetry between the Bi[sub 4]Ti[sub 3]O[sub 12] (001) plane and the SrTiO[sub 3] (001) surface. Moreover, out-of-phase boundaries were frequently observed in the epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] films. Detailed quantitative high-resolution transmission electron microscopy studies showed that the growth of epitaxial Bi[sub 4]Ti[sub 3]O[sub 12] film on the SrTiO[sub 3] (001) surface begins with the energetically favorable central TiO[sub 2] layer in the middle of the triple perovskite block within Bi[sub 4]Ti[sub 3]O[sub 12]. As a result, a number of out-of-phase domain boundaries are formed at the atomic steps on the substrate surface. These studies suggest that Bi[sub 4]Ti[sub 3]O[sub 12] films grow on (001) SrTiO[sub 3] substrates through two-dimensional island growth mechanism, where individual domains nucleate with random orientations of their polar a axis along either [110] or [110] direction of SrTiO[sub 3]. © 2003 American Institute of Physics.


Related Articles

  • Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO[sub 2-δ] on (001) MgO. Chen, L.; Chen, C. L.; Chen, X.; Donners, W.; Liu, S. W.; Lin, Y.; Huang, D. X.; Jacobson, A. J. // Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4737 

    Highly oriented ionic conductor gadolinium-doped CeO[sub 2-δ] (Ce[sub 0.8]Gd[sub 0.2]O[sub 2-δ]) thin films have been grown on single-crystal (001) MgO substrates by pulsed-laser ablation. The films are highly c-axis oriented with cube-on-cube epitaxy, as shown by x-ray diffraction and...

  • Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100). Lie, D. Y. C.; Song, J. H.; Vantomme, A.; Eisen, F.; Nicolet, M.-A.; Theodore, N. D.; Carns, T. K.; Wang, K. L. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2329 

    Presents information on a study which measured the damage and strain produced in a strained epitaxial Ge[sub0.10]Si[0.90] thin film on Si(100) using MeV [sup4]He channeling spectrometry, transmission electron microscopy and high-resolution x-ray diffractometry. Experimental procedure; Results...

  • Observation of the early stages of growth of superconducting thin films by transmission electron microscopy. Norton, M. Grant; Tietz, Lisa A.; Summerfelt, Scott R.; Carter, C. Barry // Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2348 

    A method for the direct observation of the early stages of growth of superconducting films by transmission electron microscopy (TEM) is reported. The technique uses well-characterized, single-crystal TEM foils as substrates for the deposition process. Ultrathin films of YBa2Cu3O6+x (YBCO) were...

  • Magnetic and transport properties of permalloy thin films grown by molecular beam epitaxy. Schuhl, A.; Galtier, P. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p913 

    Examines the magnetic and transport properties of permalloy thin films grown by molecular beam epitaxy. Implication of in situ electron diffraction and ex situ X-ray diffraction for the epitaxial growth of the films; Application of electron microscopy; Deposition of nickel-iron films on top of...

  • GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant... Romanov, S.I.; Mashanov, V.I.; Sokolov, L.V.; Gutakovskii, A.; Pchelyakov, O.P. // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4118 

    Proposes to grow high-quality heteroepitaxial layers using compliant silicon substrate consisting of a thin epitaxial silicon film on a high-density porous layer as a membrane and an expansive low-density porous layer as a mechanical damper. Transmission electron microscopy analysis of GeSi...

  • Defect microstructure in laser-assisted modulation molecular-beam epitaxy GaAs on (100) silicon. Christou, A.; Stoemenos, J.; Flevaris, N.; Komninou, Ph.; Georgakilas, A. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3298 

    Reports on the structural investigations of film grown by molecular-beam epitaxial techniques and specifically by migration-enhanced epitaxy. Details on the experiment; Electron microscopy observations and discussion.

  • Relation between critical current densities and epitaxy of YBa2Cu3O7 thin films on MgO(100) and SrTiO3(100). Kromann, R.; Bilde-So\rensen, J. B.; de Reus, R.; Andersen, N. H.; Vase, P.; Freltoft, T. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3419 

    Provides information on a study that investigated the preferred orientation of YBa[sub2]Cu[sub3]O[sub7] thin films grown on single-crystal MgO(100) and SrTiO[sub3] (100) substrates using x-ray diffraction and transmission electron microscopy. Methodology of the study; Results of the study;...

  • Microstructure and homogeneity in (In,Mn)As III-V-based diluted magnetic semiconductor epitaxial films. Guha, S.; Munekata, H. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2974 

    Presents information on a study which determined the microstructural evaluation of thick (In,Mn)As epitaxial films grown by molecular-beam epitaxy on InAs/GaAs(100) substrates using transmission electron microscopy. Discussion of the microstructural defects in the films; Results and discussion;...

  • Aluminum nitride films on different orientations of sapphire and silicon. Dovidenko, K.; Oktyabrsky, S.; Narayan, J.; Razeghi, M. // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2439 

    Provides information on a study that investigated epitaxial growth and microstructural characteristics of AlN films grown on sapphire and silicon substrates using plan-view and cross-sectional high-resolution transmission electron microscopy and x-ray diffraction techniques. Methodology of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics