Growth and characterization of [sup 28]Si[sub n]/[sup 30]Si[sub n] isotope superlattices

Kojima, T.; Nebashi, R.; Itoh, K. M.; Shiraki, Y.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2318
Academic Journal
We present silicon isotope superlattices: Si structures in which alternating layers are predominantly composed of the stable isotopes [sup 28]Si and [sup 30]Si. Using solid-source molecular beam epitaxy, the thickness of each isotope layer has been precisely controlled to produce isotope superlattices denoted [sup 28]Si[sub n]/[sup 30]Si[sub n], where n is the number of atomic monolayers, each one 0.136 nm thick. We have produced and studied [sup 28]Si[sub 8]/[sup 30]Si[sub 8], [sup 28]Si[sub 12]/[sup 30]Si[sub 12], and [sup 28]Si[sub 24]/[sup 30]Si[sub 24], whose structures have been confirmed by secondary ion mass spectrometry. Further confirmation was provided by Raman spectroscopy, which showed the confinement of phonons within specific isotope layers ([sup 28]Si or [sup 30]Si layers) due to the mass periodicity created by isotope layering. © 2003 American Institute of Physics.


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