Control of microelectromechanical systems membrane curvature by silicon ion implantation

Jin, S.; Movoori, H.; Kim, J.; Aksyuk, V.A.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2321
Academic Journal
Thin silicon membranes in microelectromechanical systems (MEMS) optical devices such as beam-steering, movable mirrors may exhibit undesirable curvature when their surface is metallized with light-reflecting metals to enhance optical performance. We have applied Si[sup +] ion implantations at dose levels of 0.4–5×10[sup 16]/cm[sup 2] into the gold metallization layer to successfully reduce the mirror curvature as well as the degree of its temperature-dependent changes. The curvature change as well as the temperature dependence is found to be dependent on the implantation dose. The mechanism of the observed curvature flattening effect is attributed mostly to the induced compressive stress in gold metallization caused by the insertion of foreign implanted atoms of silicon. Such a Si implantation approach can be useful as a means for post-fabrication correction of unwanted curvature in MEMS membranes, as well as a technique to intentionally introduce a desired degree of curvature if needed. A convenient blanket implantation process can be utilized with minimal contamination problems as Si is a common element already present in the MEMS. © 2003 American Institute of Physics.


Related Articles

  • Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer. Wu Zhou; Huijun Yu; Bei Peng; Huaqin Shen; Xiaoping He; Wei Su // Materials (1996-1944);Jan2013, Vol. 6 Issue 1, p244 

    Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that...

  • Tribology on the macroscale to nanoscale of microelectromechanical system materials: a review. Bhushan, B // Proceedings of the Institution of Mechanical Engineers -- Part J;2001, Vol. 215 Issue 1, p1 

    Silicon-based microelectromechanical system (MEMS) devices are made from single-crystal silicon, polycrystalline silicon (polysilicon) films obtained by low-pressure chemical vapour deposition and certain ceramic films. For high-temperature applications, SiC films are being developed to replace...

  • Hops and Pops in Timing Aren't a Child's Game. Partridge, Aaron // ECN: Electronic Component News;Dec2011, Vol. 55 Issue 15, p15 

    The article provides information on microelectromechanical system (MEMS) oscillators that do not present hops and pops in which the resonators are constructed in silicon to make the most defect-free and purest material.

  • MEMS Variable Capacitive Accelerometers.  // Power Electronics Technology Exclusive Insight;2/8/2013, p6 

    The article previews the Model 2466 series of industrial grade triaxial universal microelectromechanical systems (MEMS) capacitive accelerometer modules with eight-pin connector from Silicon Designs, Inc.

  • The coming age of micromachines. McDermott, Jeane // Popular Science;Jun84, Vol. 224 Issue 6, p87 

    Focuses on silicon micromechanics. Properties of silicon that determine the type of sensors can be made out of it; Usage of micromachines in robots; Proposition of biomedical applications for micromachines.

  • MEMS Accelerometers Check Smaller Components.  // Electronic Design;10/20/2011, Vol. 59 Issue 14, pS42 

    The article offers brief information on Silicon Designs Inc.'s microelectromechanical-systems (MEMS) accelerometers.

  • Development and testing of a planar, silicon mini-capillary pumped loop. Yerkes, Kirk L.; Pettigrew, Kenneth; Smith, Brian; Gamlen, Carol; Liepmann, Dorian // AIP Conference Proceedings;2002, Vol. 608 Issue 1, p81 

    A planar, silicon mini-capillary pumped loop (CPL) was designed, built, and tested using recent MEMS technology to provide integral cooling and temperature control for electronics. This design featured three silicon fusion bonded wafers incorporating an evaporator, condenser, liquid line and...

  • MEMS Variable Capacitance Accelerometers Eat Little Power.  // Sensors;8/22/2014, p27 

    The article evaluates the Model 1410 microelectromechanical system variable capacitive accelerometers from Silicon Designs Inc.

  • A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems. Mukhopadhyay, Biswajit; Mackowiak, Piotr; Kröhnert, Kevin; Ha-Duong Ngo; Ehrmann, Oswin; Lang, Klaus-Dieter // Micromachines;Oct2016, Vol. 7 Issue 10, p1 

    In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics