TITLE

Control of microelectromechanical systems membrane curvature by silicon ion implantation

AUTHOR(S)
Jin, S.; Movoori, H.; Kim, J.; Aksyuk, V.A.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2321
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin silicon membranes in microelectromechanical systems (MEMS) optical devices such as beam-steering, movable mirrors may exhibit undesirable curvature when their surface is metallized with light-reflecting metals to enhance optical performance. We have applied Si[sup +] ion implantations at dose levels of 0.4–5×10[sup 16]/cm[sup 2] into the gold metallization layer to successfully reduce the mirror curvature as well as the degree of its temperature-dependent changes. The curvature change as well as the temperature dependence is found to be dependent on the implantation dose. The mechanism of the observed curvature flattening effect is attributed mostly to the induced compressive stress in gold metallization caused by the insertion of foreign implanted atoms of silicon. Such a Si implantation approach can be useful as a means for post-fabrication correction of unwanted curvature in MEMS membranes, as well as a technique to intentionally introduce a desired degree of curvature if needed. A convenient blanket implantation process can be utilized with minimal contamination problems as Si is a common element already present in the MEMS. © 2003 American Institute of Physics.
ACCESSION #
10848426

 

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