Dynamics and second-order nonlinear optical susceptibility of photoexcited carriers at Si(111) interfaces

Bodlaki, D.; Borguet, F.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2357
Academic Journal
An interface specific investigation, by time-resolved second-harmonic generation, shows that photoexcited carrier dynamics at Si(111) interfaces depend strongly on surface termination. Oxide- and H-terminated surfaces show distinct transient behavior, with a surface recombination velocity <10[sup 3] cm/s. Incompletely H-terminated Si(111) shows faster dynamics, correlating with less interface passivation. A simple model reveals that the second-order nonlinear optical susceptibility of photoexcited carriers is two orders of magnitude greater than that of the valence band electrons. © 2003 American Institute of Physics.


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