Tunable nonlinear current–voltage characteristics of three-terminal ballistic nanojunctions

Shorubaiko, I.; Xu, H. Q.; Omling, P.; Samuelson, L.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2369
Academic Journal
The current–voltage (I–V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I–V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. © 2003 American Institute of Physics.


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