TITLE

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

AUTHOR(S)
Song, June O.; Dong-Seok Leem; Joon Seop Kwak; Nam, O. H.; Park, Y.; Tae-Yeon Seong
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2372
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a promising Rh-based scheme for high-quality ohmic contacts to surface-treated p-GaN:Mg (4×10[sup 17] cm[sup -3]). It is shown that the two-step surface-treated Rh contacts (10 nm) produce a specific contact resistance of 1.7×10[sup -5] Ω cm[sup 2]. It is also shown that the two-step treated Rh/Ni (5/5 nm) and Rh/Au (5/5 nm) contacts yield 6.0×10[sup -5] and 9.3×10[sup -6] Ω cm[sup 2], respectively. Based on the current–voltage measurement, x-ray photoemission spectroscopy, and Auger electron spectroscopy results, the mechanisms for the formation of the nonalloyed Rh-based ohmic contacts is described and discussed. © 2003 American Institute of Physics.
ACCESSION #
10848409

 

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