Optical properties of InAlAs/GaAsSb heterostructures grown by metalorganic vapor phase epitaxy

Chamberlin, D. R.; Yi, S. S.; Isaacson, D.; Girolami, G.; Moll, N.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2375
Academic Journal
The optical properties of GaAsSb/InAlAs heterostructures grown on InP have been measured with cathodoluminescence, photoluminescence, and Fourier-transform infrared spectroscopy (FTIR) at <10 K. A heterostructure with heavily carbon-doped GaAsSb shows little shift of emission wavelength with incident intensity. A heterostructure with undoped GaAsSb has emission that is redshifted with respect to the doped structure and has a blueshift of 6 meV per decade of increasing beam intensity. Low-temperature FTIR shows that the lower energy level transition is redshifted in the undoped sample relative to the doped sample. These observations are consistent with the presence of donor-acceptor (D–A) pair recombination in the undoped structures, which is overwhelmed by free electron-bound acceptor recombination in the doped structure. We conjecture that the anomalously large difference between emission and absorption and blueshift in D–A transition observed result from spontaneous ordering in the GaAsSb. © 2003 American Institute of Physics.


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