Molecular-beam-epitaxy growth of ferromagnetic Ni[sub 2]MnGe on GaAs(001)

Lu, J.; Dong, J. W.; Xie, J. Q.; McKernan, S.; Palmstrøm, C. J.; Xin, Y.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2393
Academic Journal
Single-crystal Heusler alloy Ni[sub 2]MnGe thin films have been grown on GaAs(001) by molecular-beam epitaxy. X-ray diffraction and transmission electron microscopy were used for postgrowth structural characterization. The Ni[sub 2]MnGe grew in a tetragonally distorted L2[sub 1]-like structure (a=5.65 Å, c=5.96 Å) with the c axis perpendicular to the film surface. An in-plane ordering with 2× periodicity and an out-of-plane ordering with 3× periodicity was observed for the as-grown films. Magnetometry measurements performed at 50 K indicate that the films are ferromagnetic and have a weak in-plane anisotropy with a coercivity ∼5.5 Oe and saturation magnetization of ∼450 emu/cm[sup 3]. The Curie temperature was measured to be ∼320 K. © 2003 American Institute of Physics.


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