Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering

Jiwei Lu; Stemmer, Susanne
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2411
Academic Journal
Near-stoichiometric Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] (BZN) films were deposited by rf magnetron sputtering. The relative permittivity and dielectric loss of BZN films were measured with frequencies up to 100 MHz using planar Al[sub 2]O[sub 3]/Pt/BZN/Pt and Si/SiO[sub 2]/Pt/BZN/Pt capacitor structures. BZN films with thicknesses in the range of 160 to 170 nm exhibited electric field tunable permittivities up to 220, and dielectric loss tangents less than 0.0005. A maximum applied bias field of 2.4 MV/cm resulted in a ∼55% tunability of the dielectric constant. The permittivity was independent of the measurement frequency over a wide frequency range (10 kHz–100 MHz). Above 1 MHz, losses were increasingly dominated by conductor losses of the Pt bottom electrode. Their excellent dielectric properties make BZN films attractive candidates for low-loss, medium-permittivity integrated device applications. © 2003 American Institute of Physics.


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