Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi[sub 4-x]Nd[sub x]Ti[sub 3]O[sub 12] films

Garg, A.; Barber, Z. H.; Dawber, M.; Scott, J. F.; Snedden, A.; Lightfoot, P.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2414
Academic Journal
Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi[sub 4]Ti[sub 3]O[sub 12] films have been grown by pulsed-laser deposition from a Bi[sub 4-x]Nd[sub x]Ti[sub 3]O[sub 12] (x=0.85) target on SrRuO[sub 3] coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO[sub 3] substrates, respectively. X-ray diffraction illustrated a unique epitaxial relationship between film and substrate for all orientations. We observed a strong dependence of ferroelectric properties on the film orientation, with no ferroelectric activity in an (001)-oriented film; a remanent polarization 2P[sub r] of 12 μC/cm[sup 2] and coercive field E[sub c] of 120 kV/cm in a (118)-oriented film; and 2P[sub r]=40 μC/cm[sup 2], E[sub c]=50 kV/cm in a (104)-oriented film. The lack of ferroelectric activity along the c-axis is consistent with the orthorhombic nature of the crystal structure of the bulk material, as determined by powder neutron diffraction. © 2003 American Institute of Physics.


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