TITLE

On the origin of shot noise in CdTe detectors

AUTHOR(S)
Ferrari, G.; Sampietro, M.; Bertuccio, G.; Gomila, G.; Reggiani, L.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2450
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Semi-insulating CdTe-based detectors exhibit shot noise at normal operating applied voltage, in spite of their linear symmetric current–voltage characteristic. In the present letter, we provide theoretical and experimental evidence that the origin of shot noise in these detectors under dark conditions can be explained in terms of a diffusion model. The physical reason for this behavior is that the dielectric relaxation time can become longer than the dynamic transit time depending on the applied bias, thus allowing carriers to cross the sample in an independent way. The predictions of the model are confirmed by detailed current noise measurements performed at different temperatures. © 2003 American Institute of Physics.
ACCESSION #
10848383

 

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