On the origin of shot noise in CdTe detectors

Ferrari, G.; Sampietro, M.; Bertuccio, G.; Gomila, G.; Reggiani, L.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2450
Academic Journal
Semi-insulating CdTe-based detectors exhibit shot noise at normal operating applied voltage, in spite of their linear symmetric current–voltage characteristic. In the present letter, we provide theoretical and experimental evidence that the origin of shot noise in these detectors under dark conditions can be explained in terms of a diffusion model. The physical reason for this behavior is that the dielectric relaxation time can become longer than the dynamic transit time depending on the applied bias, thus allowing carriers to cross the sample in an independent way. The predictions of the model are confirmed by detailed current noise measurements performed at different temperatures. © 2003 American Institute of Physics.


Related Articles

  • Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors. Suemori, Kouji; Uemura, Sei; Yoshida, Manabu; Hoshino, Satoshi; Takada, Noriyuki; Kodzasa, Takehito; Kamata, Toshihide // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p033308 

    We have investigated the influence of the surface roughness of an insulator on the threshold voltage shift caused by gate bias stressing in organic field-effect transistors (OFETs). Our investigation was conducted for OFETs with SiO2 insulators. We observed that the threshold voltage shift is...

  • Electron-electron interaction and high field transport in Si. Lugli, P.; Ferry, D. K. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p594 

    We present a study of the electron-electron interaction in n-silicon, utilizing the full dielectric function to determine the contribution of the electron-plasmon scattering terms. An Ensemble Monte Carlo is used to investigate the effects of this interaction on the transient dynamic response of...

  • Electrical characteristics of three-component dielectric media. Emets, Yu. P. // Journal of Experimental & Theoretical Physics;Sep98, Vol. 87 Issue 3, p612 

    We study the effective parameters of a three-component plane dielectric medium with a doubly periodic arrangement of circular inclusions. The problem is solved in the one-dipole approximation. The computational results are compared with a two-component Rayleigh model. The general structure of...

  • Sniffing out an intermittent high-voltage fault. Fischer, Robert // Control Engineering;Mar2014, Vol. 61 Issue 3, p18 

    The article describes the case of a high-voltage electrical fault discovered at a chemical plant's electrical system. The plant was experiencing multiple instances of blown fuses on 12.5 kV distribution feeders which was not solved by replacing the fuses and resetting the breakers. The root...

  • Modeling of the Dendrite Shape Variation with Applied Electric Field Strength in Poly(ethylene). Rezinkina, M. M. // Technical Physics Letters;Mar2000, Vol. 26 Issue 3, p196 

    A method for mathematical modeling of the electrophysical processes involved in the electrical aging of polymeric dielectrics under the action of stress is described. An example of the calculation of the defect structure evolution in space and time in a poly(ethylene) insulator is presented.

  • Inductively insulated Marx generator. Rhee, M. J. // Review of Scientific Instruments;Feb1986, Vol. 57 Issue 2, p170 

    We describe a modified Marx generator system in which each capacitor stage is insulated by an inductive cavity instead of by insulating dielectric eliminating most of the insulation volume and circuit inductance which are inevitable in the conventional Marx generator system. This feature permits...

  • Conduction-related voltage instabilities in double-layer dielectric films. Evseev, S.; Cacciato, A.; van der Pol, J. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6206 

    Threshold voltage shift induced on parasitic metal–insulator–semiconductor field-effect transistors by bias-temperature stress in the presence of double-layer insulating stacks is studied as a function of the stack composition and measurement conditions. It is shown that the...

  • Effect of misfit strain and surface roughness on the tunable dielectric behavior of Ba0.5Sr0.5TiO3 thin films. Saravanan, K. Venkata; Krishna, M. Ghanashyam; Raju, K. C. James // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p114102 

    The effect of substrate temperature on the crystallographic texture and surface morphology of Ba0.5Sr0.5TiO3 deposited by rf magnetron sputtering on (111) oriented Pt (150 nm)/Ti (10 nm)/SiO2 (300 nm)/Si (100) substrates is reported. The onset of crystallinity is observed above 500 °C, beyond...

  • Influence of metal-insulator junction on surface flashover in vacuum. Pillai, A. Sivathanu; Hackam, Reuben // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p4992 

    Presents information on a study which analyzed the influence of the metal dielectric junction on the electric field distribution along the solid insulator-vacuum interface in detail in widely used electrode-insulator geometries. Methodology of the study; Results and discussion of the study;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics