Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors

Solodky, S.; Khramtsov, A.; Baksht, T.; Leibovitch, M.; Hava, S.; Shapira, Yoram
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2465
Academic Journal
AlGaN/GaN high electron mobility transistor, AlGaAs/InGAs/GaAs pseudomorphic HEMT, and InAlAs/InGaAs metamorphic HEMT (MHEMT) epitaxial structures have been characterized using surface photovoltage spectroscopy. The effects of the transistor top and bottom delta-doping levels δ[sub top], δ[sub bot], and surface charge Q[sub sur] on the spectrum features have been studied using numerical simulations. Based on the latter, an empirical model has been developed, which allows extraction and comparison of δ[sub top], δ[sub bot], and Q[sub sur] and is applicable for both double-sided and single-sided delta-doped structures. Prediction of the final device performance by the model is shown for two MHEMT structures. Devices produced on these structures show maximum drain currents, which correlate well with δ[sub top] values calculated using the model. © 2003 American Institute of Physics.


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