Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

Buh, G. H.; Kopanski, J. J.
September 2003
Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2486
Academic Journal
The effect of illumination from the laser of an optical-beam-deflection atomic force microscope (AFM) on a semiconductor sample is monitored with a (connected in parallel) scanning capacitance microscope (SCM). The photoexcitation of carriers in a silicon sample is quantified using the SCM measured capacitance–voltage curves. A significant difference is seen between SCM capacitance–voltage characteristics measured under true-dark and normal (illuminated) conditions, and is attributed to light spillage over the edges of the AFM cantilever and light transmission through the cantilever. We developed a light-induced transient spectroscopy through simple modification of a commercial SCM and demonstrate it as a tool for the measurement of carrier lifetime with microscopic scale. © 2003 American Institute of Physics.


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