Enhanced blue emission from Tm-doped Al[sub x]Ga[sub 1-x]N electroluminescent thin films

Lee, D.S.; Steckl, A.J.
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2094
Academic Journal
Electroluminescent (EL) emission from Tm-doped Al[sub x]Ga[sub 1-x]N (Al[sub x]Ga[sub 1-x]N:Tm) has been observed with various Al compositions (0≤x≤1). Al[sub x]Ga[sub 1-x]N:Tm thin films were grown by molecular beam epitaxy with in situ doping of Tm. At lower Al composition (x<0.15), blue emission at 478 nm dominates, corresponding to the Tm [sup 1]G[sub 4]→[sup 3]H[sub 6] transition. For x>0.15, however, a second blue emission peak was observed at 465 nm, becoming dominant with increasing Al composition. The 465 nm emission is attributed to the higher level Tm transition [sup 1]D[sub 2]→[sup 3]F[sub 4], which was not observed in GaN:Tm. Blue EL emission from Tm was enhanced with Al content in the films. The ratio of EL intensity at blue (465 nm plus 478 nm) to infrared (801 nm) wavelengths increased monotonically with Al composition, from ∼2 for GaN:Tm to ∼30 for AlN:Tm. © 2003 American Institute of Physics.


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