Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

Tansu, Nelson; Jeng-Ya Yeh; Mawst, Luke L.
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2112
Academic Journal
Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers of GaAs[sub 0.85]P[sub 0.15] instead of GaAs, surrounding the InGaAsN quantum-well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90–100 °C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (L[sub cav]=2000 μm) with GaAs[sub 0.85]P[sub 0.15]-direct barriers at temperature of 80 and 90 °C, respectively. © 2003 American Institute of Physics.


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