Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Park, Si-Hyun; Kim, Jaehoon; Jeon, Heonsu; Sakong, Tan; Lee, Sung-Nam; Chae, Suhee; Park, Y.; Jeong, Chang-Hyun; Yeom, Geun-Young; Cho, Yong-Hoon
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2121
Academic Journal
A GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in an extended cavity structure. A VCSEL device had a long extended cavity, which consisted of a sapphire substrate as well as a GaN epilayer and had an integrated microlens on one side. High-reflection dielectric mirrors were deposited on both sides of the laser cavity. The laser was optically pumped and operated at room temperature. The VCSEL device lased at a low threshold excitation intensity of 160 kW/cm[sup 2]. In contrast to a conventional microcavity-VCSEL structure, the VCSEL operated in multiple longitudinal modes with mode spacing consistent with its physical thickness. © 2003 American Institute of Physics.


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