TITLE

Two stage oxidation in epitaxial Ni (111)/GaN (0001) thin films

AUTHOR(S)
Kang, H.C.; Seo, S.H.; Jang, H.W.; Kim, D.H.; Noh, D.Y.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present the oxidation process of epitaxial Ni (111)/GaN (0001) thin films studied by in situ synchrotron x-ray scattering, scanning electron microscopy, and transmission electron microscopy. By monitoring the evolution of the Ni (111) Bragg reflection, we reveal that two distinct oxidation processes occur. Initially, a continuous NiO layer of about 50 Å thickness is formed on the surface of Ni. The planar oxide layer saturates immediately and passivates the film from further surface oxidation. From this stage, the oxidation proceeds by means of the growth of surface oxide islands. The Ni atoms diffuse out through the defect sites running vertically through the initial oxide layer to form the oxide islands. Voids are generated underneath the oxide layer in this process. The oxide in the second stage grows logarithmically in time with the activation energy of about 0.15 eV. © 2003 American Institute of Physics.
ACCESSION #
10774642

 

Related Articles

  • Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers. Neudeck, Philip G.; Powell, J. Anthony; Beheim, Glenn M.; Benavage, Emye L.; Abel, Phillip B.; Trunek, Andrew J.; Spry, David J.; Dudley, Michael; Vetter, William M. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2391 

    Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa,...

  • Current crowding effects in a CdS/LaS cold cathode. Mumford, P.D.; Cahay, M. // Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3707 

    Analyzes the importance of current crowding in a new cold cathode emitter that consists of a thin wide band-gap semiconductor material sandwiched between a metallic contact and a low work function semimetallic thin film. Current crowding effects; Power dissipation in the cold cathode.

  • BN/ZnO heterojunction diodes with apparently giant ideality factors. Brötzmann, M.; Vetter, U.; Hofsäss, H. // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063704-1 

    Until now, a common feature of many wide band gap heterojunction diodes is an unexplained large ideality factor n>2. In this context we investigate the diode characteristics of heterojunction diodes consisting of a crystalline semiconductor material such as ZnO covered with a thin semiconducting...

  • Lasing characteristics of ZnxMg1-xO and ZnO:Al epilayers. Ding, C. R.; Li, S. W.; Wang, H. Z. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p241918 

    Optical characteristics of ZnxMg1-xO, ZnO:Al, and ZnO epilayers are investigated. At pulse laser pumping, stimulated emissions are observed in these epilayers. Among them, spectral blueshifts are dependent on the Mg substitution concentration, and the highest lasing photon energy of 3.51 eV ever...

  • Structural, Optical and Electrical Properties of Tin Oxide Thin Films for Application as a Wide Band Gap Semiconductor. Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid // AIP Conference Proceedings;2015, Vol. 1675 Issue 1, p1 

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were...

  • Correlation of ZnO thin film surface properties with conductivity. Tudose, I. V.; Horváth, P.; Suchea, M.; Christoulakis, S.; Kitsopoulos, T.; Kiriakidis, G. // Applied Physics A: Materials Science & Processing;Oct2007, Vol. 89 Issue 1, p57 

    Technological demands for the fabrication of nanostructured active coatings provide renewed motivation for understanding the properties that control the morphology of the thin film surface. With decreasing structure size, the issues of finite size and shape effects become non-negligible...

  • Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films. Lu, J. G.; Fujita, S.; Kawaharamura, T.; Nishinaka, H.; Kamada, Y.; Ohshima, T. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p262107 

    Transparent conducting Al-doped Zn1-xMgxO thin films were grown on glass substrates by chemical vapor deposition. The resistivity could be lowered to 10-3 Ω cm with optical transmittance above 85% in visible regions. The influence of carrier concentration on band-gap shift in Zn1-xMgxO alloys...

  • Progress in the growth and research of crystals for wide-gap semiconducting materials. Vodakov, Yu. A.; Mokhov, E. N. // Physics of the Solid State;May99, Vol. 41 Issue 5, p742 

    The feasibility of a sublimation sandwich method for controlled growth of single crystals and epitaxial layers of different SiC and GaN polytypes is demonstrated. The controlled production of pure (n[sub i] < 10[sup 16] cm[sup -3]) and heavily-doped crystals and epitaxial layers of these...

  • Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh[sub 2]O[sub 4]/n-ZnO. Ohta, Hiromichi; Mizoguchi, Hiroshi; Hirano, Masahiro; Narushima, Satoru; Kamiya, Toshio; Hosono, Hideo // Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p823 

    A reactive solid-phase epitaxy technique was applied to fabricate all-oxide transparent p-n heterojunctions composed of p-ZnRh[sub 2]O[sub 4] and n-ZnO thin layers. Polycrystalline ZnRh[sub 2]O[sub 4] was deposited on a ZnO epitaxial layer at room temperature. Thermal annealing of the bilayer...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics