Intense ultraviolet cathodoluminescence at 318 nm from Gd[sup 3+]-doped AlN

Vetter, Ulrich; Zenneck, Jan; Hofsäss, Hans
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2145
Academic Journal
We present investigations of Gd-implanted aluminum nitride, studied with cathodoluminescence (CL) as well as time-resolved CL in the temperature range 12–300 K. Luminescence due to intra-4f electron transitions of Gd[sup 3+] is dominated by the [sup 6]P[sub 7/2]→[sup 8]S[sub 7/2] transition between the first excited state and the ground state of Gd[sup 3+] detected at around 318 nm. Time-resolved CL of the [sup 6]P[sub 7/2] level monitoring the [sup 6]P[sub 7/2]→[sup 8]S[sub 7/2] transition shows a temperature-dependent lifetime which decreases from 0.76 ms at 12 K to 0.69 ms at 300 K, in contrast to an increasing intensity of the [sup 6]P[sub 7/2]→[sup 8]S[sub 7/2] transition by a factor of more than 3.5 in the same temperature range. The decay is of the Inokuti–Hirayama-type indicating energy transfer between Gd[sup 3+] ions. Due to the overall weak splitting of the [sup 6]P[sub 7/2] and [sup 8]S[sub 7/2] multiplets phonon replica with energies of 100 and 588 cm[sup -1] can be assigned. © 2003 American Institute of Physics.


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